Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire  

作　　者：Huiying Zhou Haiping Shi Baochang Cheng 

机构地区：[1]Computer and Information Engineering School,Central South University of Forestry and Technology,Changsha 410004,China [2]School of Materials Science and Engineering,Nanchang University,Nanchang 330031,China [3]Nanoscale Science and Technology Laboratory,Institute for Advanced Study,Nanchang University,Nanchang 330031,China

出　　处：《Journal of Semiconductors》2020年第1期72-77,共6页半导体学报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(No.51571107);the Key Project of Hunan Provincial Department Education(No.17A222)

摘　　要：For nanostructure SnO2,it is very difficult for its electric properties to accurately control due to the presence of abundant surface states.The introduction of Sm can improve the traps in surface space charge region of SnO2 nanowires,resulting in a controllable storage charge effect.For the single nanowire-based two-terminal device,two surface state-related back-to-back diodes are formed.At a relatively large voltage,electrons can be injected into the traps in surface space charge region from negative electrode,resulting in a decrease of surface barrier connected with negative electrode,and contrarily electrons can be extracted from the traps in surface space charge region into positive electrode,resulting in an increase of surface barrier connected with positive electrode.The reversible injection and extraction induce a nonvolatile resistive switching memory effect.For nanostructure SnO2, it is very difficult for its electric properties to accurately control due to the presence of abundant surface states. The introduction of Sm can improve the traps in surface space charge region of SnO2 nanowires, resulting in a controllable storage charge effect. For the single nanowire-based two-terminal device, two surface state-related back-to-back diodes are formed. At a relatively large voltage, electrons can be injected into the traps in surface space charge region from negative electrode, resulting in a decrease of surface barrier connected with negative electrode, and contrarily electrons can be extracted from the traps in surface space charge region into positive electrode, resulting in an increase of surface barrier connected with positive electrode. The reversible injection and extraction induce a nonvolatile resistive switching memory effect.

关 键 词：NANOWIRE surface state TRAP memory effect 

分 类 号：TB3[一般工业技术—材料科学与工程]