一种2.8～6GHz单片双平衡无源混频器  

Design of 2.8-6GHz On-chip Double-balanced Passive Mixer

作　　者：李垚 朱晓维[1] LI Yao;ZHU Xiao-wei(State Laboratory of Millimeter Waves y Southeast University,Nanjing 210096,China)

机构地区：[1]东南大学毫米波国家重点实验室

出　　处：《微波学报》2019年第6期26-30,共5页Journal of Microwaves

基　　金：国家自然科学基金(61671149,61701110)

摘　　要：采用WIN 0.15μm GaAs pHEMT工艺研制了2.8~6 GHz的片上双平衡无源混频器。混频器在本振端和射频端均采用不同尺寸的螺旋型Marchand巴伦结构,不仅大大缩小了芯片尺寸,并且在没有外加补偿电路的情况下,在2.8~6 GHz频带范围内均取得良好匹配。测试结果表明,混频器的变频损耗小于8 dB,射频端口反射系数小于-10 dB,LO到RF的隔离度大于40 dB,输入1 dB压缩点大于10 dBm,输入三阶交调阻断点大于17 dBm。仿真与实测结果对应良好,芯片总面积为1.4 mm×1.1 mm。A 2.8-6GHz on-chip double-balanced passive mixer is presented in this paper, which is fabricated in WIN’s GaAs 0.15 μm pHEMT process. Spiral-shaped Marchand baluns of different sizes are utilized in the LO and RF ports of the mixer to reduce chip size and improve port matching without any redundant circuit. As demonstrated in measurement results, the mixer’s conversion loss and return reflection are less than 8 dB and -10 dB, respectively, its RF-LO isolation is better than 40 dB, as well as its IP1 dB is better than 10 dBm and IIP3 is better than 17 dBm. The measurement results agree well with the simulation ones, and the overall size of the chip is 1.4 mm×1.1 mm.

关 键 词：无源双平衡混频器 单片微波集成电路 宽带 

分 类 号：TN773[电子电信—电路与系统]