23～47GHz宽带BiCMOS低噪声放大器设计  

Design of a 23-47GHz Wideband BiCMOS Low Noise Amplifier

作　　者：张浩[1] 王科平[2] 冷思明 ZHANG Hao;WANG Ke-ping;LENG Si-ming(The 14th Institute of CETC,Nanjing 210039,China;Institute of RF&OE-ICs,Southeast University,Nanjing 21000S,China;Magnichip Co.,Ltd.,Nanjing 210019,China)

机构地区：[1]中国电子科技集团公司第十四研究所,南京210039 [2]东南大学射频与光电集成电路研究所,南京210008 [3]南京美辰微电子有限公司,南京210019

出　　处：《微波学报》2019年第6期45-48,共4页Journal of Microwaves

摘　　要：针对不同国家标准对5G高频段的不同频率需求,设计了一款超宽带低噪声放大器,频率覆盖23~47 GHz。采用T型电感并联峰化技术,实现对传统电感并联峰化机构的带宽扩展,在相同功耗下,带宽可大幅提升。该放大器采用0.13μm BiCMOS工艺设计实现,芯片面积0.42 mm×0.85 mm。测试结果表明,该低噪放在频率23~47 GHz范围内,增益大于22 dB,S11和S22均小于-7dB,噪声系数2.6~3.8 dB,输入1 dB压缩点大于-15 dBm,在1.2 V电源电压下,芯片整体功耗仅12 mW。A 23-47 GHz broadband low noise amplifier(LNA) is designed for different national standards in 5 G high frequency band. By adopting T-type inductor parallel peaking technology, the bandwidth of traditional inductor parallel peaking mechanism is extended. With the same power consumption, the bandwidth can be greatly increased. The amplifier is designed and implemented by 0.13 μm BiCMOS process. The chip area is 0.42 mm×0.85 mm. The test results show that, in the frequency range of 23-47 GHz, the gain is >22 dB, S11 and S22 are less than-7 dB, noise figure is 2.6~3.8 dB, input compression point of 1 dB is greater than -15 dBm, and overall power consumption of the chip is only 12 mW at 1.2 V supply voltage.

关 键 词：5G 宽带 毫米波 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]