石墨烯掺杂和烧结温度对MgB2块体微观结构和超导性能的影响（英文）  

Effect of Graphene Doping and Sintering Temperature on Microstructure and Superconducting Properties of MgB2 Bulks

作　　者：杨芳[1] 刘浩然 王庆阳[1] 熊晓梅[1] 闫果[3] 冯建情[1] 李少强[3] 李成山[1] 冯勇[3] Yang Fang;Liu Haoran;Wang Qingyang;Xiong Xiaomei;Yan Guo;Feng Jianqing;Li Shaoqiang;Li Chengshan;Feng Yong(Northwest Institute for Nonferrous Metal Research,Xi’an 710016,China;State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi’an 710072,China;Western Superconducting Technologies Co.,Ltd,Xi’an 710018,China)

机构地区：[1]西北有色金属研究院,陕西西安710016 [2]西北工业大学凝固技术国家重点实验室,陕西西安710072 [3]西部超导材料科技股份有限公司,陕西西安710018

出　　处：《稀有金属材料与工程》2019年第12期3819-3823,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China（51772250）;National Science Basic Research Plan in Shannxi Province of China（2017ZDJC-19）;Xi’an Weiyang District Science and Technology Project（201816）

摘　　要：采用未掺杂石墨烯的粉末制备MgB2块体作对比,研究了石墨烯掺杂对MgB2块材微观结构和超导性能的影响,以及退火温度对石墨烯掺杂MgB2块材微观结构和超导性能的影响。对烧结后的样品采用XRD,SEM,SQUID进行相组成,微观结构和超导性能等的分析检测。研究发现,石墨烯掺杂明显提高了MgB2超导材料的临界电流密度,在20 K和1 T磁场下,最大的临界电流密度达到1.8×105A/cm^2。The effect of graphene doping on the microstructure and superconducting properties of Mg B2 bulks was examined in comparison with the case of un-doped Mg B2. The correlation among annealing temperatures, microstructures and superconducting properties in graphene doped Mg B2 bulks was investigated. The phase, microstructure and superconductivity of Mg B2 were characterized by X-ray diffraction(XRD), scanning electron microscope(SEM) and superconducting quantum interference device(SQUID), respectively. The results show that the graphene doping results in an obvious improvement of the critical current density. The highest critical current density reaches 1.8×105 A/cm^2 at 20 K and 1 T.

关 键 词：MGB2 掺杂 烧结 微观结构 临界电流密度 

分 类 号：TQ132.2[化学工程—无机化工]