基于V93000系统的高速QDR SRAM存储器测试方法  

Test Method of High Speed QDR Static Random Access Memory Based on V93000 System

作　　者：王征宇 马锡春 Wang Zheng-yu;Ma Xi-chun(China Key System&Integrated Circuit Co.,Ltd.,Jiangsu Wuxi 214072)

机构地区：[1]中科芯集成电路有限公司

出　　处：《电子质量》2019年第12期12-17,共6页Electronics Quality

摘　　要：为满足当今的高速网络中高带宽、高密度存储器要求,四倍数据速率静态随机存取存储器(QDR SRAM)广泛应用于路由器、交换机、集成器、网络卡等互联网设备中。QDR SRAM在双倍数据速率存储器(DDR)的基础上,具有独立的数据输入端口和数据输出端口,在脉冲信号的上升沿和下降沿都可以处理数据资料,读写控制、读写地址分离,与DDR相比操作起来更简便。但同时QDR因其数据传输速率高、存储容量较大,使得如何对其性能进行精确评价成为存储器类器件测试的一个亟待解决的难题。文中以GSI公司的GS81302D37GE-300I型芯片为例,介绍了一种基于爱德万公司V93000测试系统进行高速QDR SRAM电路测试的方法,依托V93000测试系统的可编程阻抗匹配特性及存储器专用测试软件包等对其性能进行高效、准确地评价,以满足高速QDR SRAM各项指标的评估要求。Quadruple data rate static random access memory(QDR SRAM)is widely used in routers,switches,integrators,network cards and other Internet devices to meet the requirements of high bandwidth and high density memory in today's high-speed networks.Quadruple Data Rate Static Random Access Memory(QDR SRAM)has independent data input port and data output port on the basis of double data rate memory(DDR).It transmits four bus-width data(two reads and two writes)in each clock cycle.That is to say,the rising and falling edges of pulse signal can process data and avoid idle period.When the situation arises,the control of reading and writing is separated,and the address of reading and writing is separated,which makes the operation easier.Taking GSI's GS81302D37GE-300I chip as an example,this paper introduces a method of high-speed QDR SRAM testing based on Advantest's V93000 test system,and evaluates its performance to meet the accurate evaluation of various indicators of high-speed QDR SRAM.

关 键 词：四倍数据速率静态随机存取存储器 附加存储器测试 测试向量 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]