金属有机物分解法制备HfO2-ZrO2纳米多层薄膜及其铁电性能研究  

Ferroelectric Properties of HfO2-ZrO2 Nanolayered Films Using Metallo Organic Decomposition

作　　者：汤林 刘逸群 陈海燕[1] 陈永红 周科朝[1] 张斗[1] TANG Lin;LIU Yi-qun;CHEN Hai-yan;CHEN Yong-hong;ZHOU Ke-chao;ZHANG Dou(State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083 Chian)

机构地区：[1]中南大学粉末冶金国家重点实验室

出　　处：《湘潭大学学报（自然科学版）》2019年第5期85-92,共8页Journal of Xiangtan University(Natural Science Edition)

基　　金：国家自然科学基金项目(51602350)

摘　　要：HfO2基铁电薄膜是一种环境友好型的铁电材料,具有尺寸可缩放性、与CMOS兼容性好等多方面优势,有望代替传统钙钛矿结构材料成为铁电存储器件的主要组成材料之一.近年来,已有相关研究表明Zr掺杂的HfO2基薄膜具有良好的铁电性.然而,针对其复合多层结构的铁电薄膜却鲜有报道.为此,该研究利用金属有机物分解法制备了HfO2和ZrO2层交替生长的HfO2-ZrO2纳米多层薄膜,对薄膜的物相、表面形貌和铁电性能进行了相应的表征和分析,研究了退火工艺对薄膜铁电性能的影响.结果表明,随着纳米层数的增加,HfO2-ZrO2薄膜的结晶性得到改善,且薄膜表面致密度增加,表面较为平整,晶粒有所细化.在400℃、1 min的退火条件下,HfO2/ZrO2纳米多层薄膜具有明显的铁电性,电流翻转峰明显,剩余极化强度高达16μC/cm 2,纳米多层薄膜具有最小的漏电流密度以及良好的耐疲劳性能.HfO2-based ferroelectric thin films are environmentally friendly ferroelectric materials,which have many advantages such as scalability,good compatibility with CMOS and so on.They are expected to replace the traditional perovskite and become one of the main components of ferroelectric memory devices.In recent years,there have been many reports demonstrating the ferroelectricity in Zr-doped HfO2-based films.However,ferroelectric films for their composite multilayers are rarely reported.In this work,nanolayered films with alternating growth of HfO2 and ZrO2 layers were prepared by metallo organic decomposition method.The crystal structure,surface morphology and ferroelectric properties of the films were characterized,respectively.And the effect of annealing process on the ferroelectric properties of the films was investigated.It indicates that the HfO2-ZrO2 nanolayered film shows obvious ferroelectric switching current peak,and the remnant polarization is 16μC/cm 2 with low leakage current density and good endurance resistance under the annealing condition of 400℃,1 min.

关 键 词：薄膜 纳米多层 铁电性 金属有机物分解 

分 类 号：O152.1[理学—数学]