钇掺杂氧化铪薄膜的铁电与非线性光学性能研究  

Ferroelectric and Nonlinear Optical Properties of Y-Doped HfO2 Thin Films

作　　者：刘继权 黄飞[1] 秦俊[1] 王艳[2] 刘琦[2] 刘明[2] 邓龙江[1] 毕磊[1] LIU Ji-quan;HUANG Fei;QIN Jun;WANG Yan;LIU Qi;LIU Ming;DENG Long-jiang;BI Lei(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610000;Institute of Microelectronics of the Chinese Academy of Science,Beijing 100029 China)

机构地区：[1]电子科技大学电子科学与工程学院,四川成都610000 [2]中国科学院微电子研究所,北京100029

出　　处：《湘潭大学学报（自然科学版）》2019年第5期93-103,共11页Journal of Xiangtan University(Natural Science Edition)

摘　　要：铁电材料在铁电动态随机储存器、铁电场效应晶体管、铁电隧穿结和负电容器件等领域得到研究者的广泛关注.近年来,铁电二氧化铪(HfO2)材料由于具有CMOS兼容性、高介电常数、宽带隙等特点成了研究热点.该文使用脉冲激光沉积技术制备了钇掺杂铁电二氧化铪(HYO)并研究了其铁电和疲劳特性,指出薄膜的疲劳是由束缚在浅势阱中的注入载流子造成的畴壁钉扎效应引起.进一步研究了60 Coγ射线对HYO薄膜铁电存储性能的影响,发现薄膜的抗辐照能力优于传统的铁电材料.最后,研究了基于HYO薄膜的非线性光学效应,计算出的HYO薄膜的二阶非线性系数为χ^(2)=(6.0±0.5)pm/V.这些研究为铁电HfO2薄膜在存储和非线性光学领域的应用奠定了基础.Ferroelectric materials have received extensive attention in the fields of random memory,field effect transistors,ferroelectric tunneling junctions,and negative capacitance devices.Among them,ferroelectric HfO2 has been widely investigated due to their CMOS compatibility,high dielectric constant,and wide band gap.In this paper,Y-doped cerium oxide(HYO)has been prepared by pulsed laser deposition technique.Its ferroelectric and fatigue properties are studied.It is pointed out that the fatigue of the film is caused by domain wall pinning effects due to the injected carriers trapped in the shallow potential well defect centers.In addition,the effect of 60 Coγon the properties of HYO film has also been studied.It is found that the film has strong radiation stability.Finally,the nonlinear optical property of HYO is also studied.The calculated second-order nonlinear optical coefficient of HYO film isχ^(2)=(6.0±0.5)pm/V.These studies laid the foundation for the practical application of ferroelectric HfO2 in the fields of memory and nonlinear photonics.

关 键 词：铁电二氧化铪 疲劳 抗辐照 非线性光学效应 

分 类 号：O484[理学—固体物理]