环栅纳米线FET自热效应及微尺度空间效应研究  

Investigation of Self-Heating Effect and Microscale Spatial Effect for Gate-All-Around Nanowire FET

作　　者：黄宁 赵婉婉 刘伟景 杨婷 李清华 Huang Ning;Zhao Wanwan;Liu Weijing;Yang Ting;Li Qinghua(College of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China;Shanghai Huali Integrated Circuit Manutacturing Co.,Ltd.,Shanghai 201203,China;GTA Semiconductor Co.,Ltd.,Shanghai 201306,China)

机构地区：[1]上海电力大学电子与信息工程学院,上海200090 [2]上海华力集成电路制造有限公司,上海201203 [3]上海积塔半导体有限公司,上海201306

出　　处：《半导体技术》2019年第12期932-937,共6页Semiconductor Technology

摘　　要：研究了纳米线高度与纳米线宽度对5 nm制程垂直堆叠式环栅纳米线场效应晶体管(GAA NWFET)中自热效应及微尺度空间效应的影响机理。利用Sentaurus TCAD软件对不同尺寸的纳米线器件性能进行仿真,采用控制变量法,以0.5 nm为步长,分别将纳米线高度及宽度从4 nm增加至8 nm。仿真结果表明,当纳米线高度及宽度分别取4 nm和6.5 nm时,可最大程度规避微尺度空间效应对载流子迁移率的影响,并有效提升散热能力,使器件开态电流增加44.4%,沟道热学电阻减小60.3%。此外,设置纳米线高度为4 nm,依次将顶部/中部/底部沟道的纳米线宽度从6.5 nm增加至8 nm,发现当底部沟道的纳米线宽度相等时,增加靠近体硅处的沟道宽度更有利于改善器件的电热性能。The effect mechanism of height and width of nanowires on the self-heating effect and microscale spatial effect of the vertically stacked gate-all-around nanowire field effect transistor(GAA NWFET)in 5 nm technology were investigated.The performances of different sizes of nanowire devices were simulated by Sentaurus TCAD software.Using the control variable method,the height and width of the nanowires were increased from 4 nm to 8 nm in steps of 0.5 nm,respectively.The simulation results show that when the height and width of the nanowires are 4 nm and 6.5 nm,respectively,the influence of the micro-scale spatial effect on the carrier mobility can be largely avoided,and the heat dissipation capability is effectively improved.The on-state current of the device increases 44.4%and the channel thermal resistance decreases 60.3%.In addition,when the height of the nanowire is 4 nm,the width of the nanowires of the top/middle/bottom channel is sequentially increased from 6.5 nm to 8 nm.And it is found that when the width of the nanowires of the bottom channel is equal,the increase of the channel width close to the bulk silicon is more conducive to improve the electrothermal performance of the device.

关 键 词：环栅 垂直堆叠结构 自热效应 微尺度空间效应 纳米线 

分 类 号：TN386[电子电信—物理电子学]