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作 者:廉鹏飞 张辉 祝伟明 莫艳图 蒋坤 孔泽斌 楼建设 王昆黍 Lian Pengfei;Zhang Hui;Zhu Weiming;Mo Yantu;Jiang Kun;Kong Zebin;Lou Jianshe;Wang Kunshu(No.808 Institute,Shanghai Academy of Spaceflight Technology,Shanghai 201109,China;Beijing Microelectronics Technology Institute,Beijing 100076,China;No.811 Institute,Shanghai Academy of Spaceflight Technology,Shanghai 200245,China)
机构地区:[1]上海航天技术研究院第八〇八研究所 [2]北京微电子技术研究院 [3]上海航天技术研究院第八一一研究所
出 处:《半导体技术》2019年第12期961-966,共6页Semiconductor Technology
基 金:预先研究项目(050401)
摘 要:针对一种锂离子电池管理芯片的失效定位进行了研究。某单机在测试时由于锂离子电池管理芯片失效,导致所采集的电压数据间歇异常跳变。经一致性分析,发现失效锂离子电池管理芯片老炼后的转换功耗和回读功耗与同批次芯片相比异常增加。通过微光分析和版图对比,发现失效芯片中菊花链电流比较器的NMOS管存在漏电缺陷。对比较器工作原理进行进一步分析,并分析了SCLK接口和CNVST接口的翻转阈值与功耗变化量之间的关系,确认了芯片失效是由于NMOS管漏电所导致,且通过电老炼可以暴露NMOS管的漏电缺陷。最后,针对器件功耗变化量与内部NMOS管漏电之间的关系进行了仿真和计算,定量验证了锂离子电池管理芯片老炼后功耗的增加是由于比较器NMOS管漏电引起的。The failure localization of a lithium-ion battery management chip was studied. The acquired voltage data of a single-machine intermittently jumped during testing caused by the failure of a lithium-ion battery management chip. After consistency analysis, it is found that the conversion power consumption and the read-back power consumption of the failure chip are abnormally higher than those of the same batch chips. Through emission microscopy and layout comparison, it is found that the NMOSFET in the daisy chain current comparator of the failure chip has a leakage failure. The operational principle of the comparator was further analyzed, and the relationship between the reversal threshold and the power consumption variation of the SCLK and CNVST interfaces were analyzed. It is confirmed that the chip fai-lure is cause by the leakage of the NMOSFET, and the leakage failure can be exposed through an burn-in test. The correlation between the power consumption variation of the chip and the leakage of the internal NMOSFET were simulated and calculated. It is quantitatively verified that the increase of the power consumption of the lithium-ion battery management chip after the burn-in test is caused by the leakage of the NMOSFET in the comparator.
关 键 词:锂离子电池管理芯片 失效 比较器 功耗 翻转阈值
分 类 号:TN407[电子电信—微电子学与固体电子学]
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