一种符合欧姆定律的IGBT等效电阻模型  

An Equivalent Electrical Resistance Model of IGBT Suitable for Ohm’s Law

作　　者：贾英杰[1] 罗毅飞[1] 肖飞[1] 刘宾礼[1] 黄永乐 Jia Yingjie;Luo Yifei;Xiao Fei;Liu Binli;Huang Yongle(National key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering,Wuhan 430033,China)

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室

出　　处：《电工技术学报》2020年第2期310-317,共8页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金重大项目（51490681）;国家重点基础研究发展计划（973计划）（2015CB251004）资助

摘　　要：有限元仿真普遍通过求解电流守恒方程来实现对电流场的计算,计算方法上符合欧姆定律,即电流与电压呈正比关系。IGBT的电气特性本质上区别于纯导体,芯片的电导率也不等同于芯片材料的电导率,因此无法直接应用于有限元仿真。针对这一问题,该文首先通过最小二乘法对IGBT的V-I特性曲线进行了分段线性化处理,并通过函数转换构建了一种在计算方法上符合欧姆定律的IGBT等效电阻模型。然后进一步将IGBT芯片的等效电阻转换为等效电导率,构建了基于有限元的IGBT电热耦合模型。最后通过短时变电流的单脉冲测试对所建立的模型进行了验证。实验结果表明:所提出的建模方法可以在满足欧姆定律基本算法的基础上,对电流连续变化工况下的IGBT电热特性进行准确表征。The calculation of electric current field is generally realized by solving the current conservation equation in finite element simulation.The calculation method conforms to Ohm's law,that is,the current is proportional to the voltage.However,the electrical characteristics of IGBT are essentially different from linear conductors,and the conductivity of the chip is not equal to the conductivity of the chip material,so it cannot be directly applied to finite element simulation.Therefore,firstly,this paper performs piecewise linearization of the V-I characteristics curve of IGBT by least square method,and constructed an equivalent resistance model of IGBT suitable for Ohm's law by function transformation.Then,the equivalent resistance of IGBT chip was transformed into equivalent conductivity,and the electrothermal coupling model of IGBT chip based on finite element method was constructed.Finally,the model was verified by a short time varying current experiment under single pulse.Experimental results show that the proposed modeling method satisfies the basic algorithm of Ohm’s law,and can accurately describe the electro-thermal characteristics of IGBT under continuous current changing conditions.

关 键 词：有限元法 V-I特性 绝缘栅双极型晶体管(IGBT) 等效电阻 电热耦合 

分 类 号：TN322[电子电信—物理电子学]