Ir(111)表面石墨烯中缺陷的原子结构确认  

Structural Identification of Defects on Graphene/Ir( 111)

作　　者：李世超[1,2] 刘梦溪 裘晓辉[1,2] LI Shichao;LIU Mengxi;QIU Xiaohui(CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院纳米标准与检测重点实验室,中国科学院纳米科学卓越创新中心,国家纳米科学中心,北京100190 [2]中国科学院大学,北京100049

出　　处：《高等学校化学学报》2020年第1期49-55,共7页Chemical Journal of Chinese Universities

基　　金：国家重点研发计划项目(批准号:2017YFA0205000,2016YFA0200700);国家自然科学基金(批准号:21603045,21972032,21425310,21790353,21721002);中国科学院-北京大学率先合作团队项目资助~~

摘　　要：识别和解析石墨烯中缺陷的精确原子结构是研究不同类型缺陷的物化特性,实现石墨烯物性调控的前提,可以为在原子尺度研究石墨烯缺陷的构效关系提供重要的实验依据.本文结合扫描隧道显微镜(STM)和原子力显微镜(AFM)确认了在Ir(111)表面生长的石墨烯中自发形成的缺陷,以及通过离子轰击方法在石墨烯中引入的多种缺陷结构,包括单空位缺陷、非六元环拓扑结构以及石墨烯层下的基底缺陷.The identification of the precise structure of the defects is a prerequisite for studying the physicochemical properties of different types of defects and achieving of graphene properties.Scanning tunne-ling microscopy(STM)and atomic force microscopy(AFM)were combined to study the precise structure of graphene defects formed during the growth process on Ir(111)surface and artificially induced by ion sputte-ring,including single vacancies,nonhexagonal topological structures,as well as the defects under graphene layer.

关 键 词：扫描隧道显微镜 qPlus原子力显微镜 石墨烯 缺陷 空位 铱(111)表面 

分 类 号：O647[理学—物理化学] O484.1[理学—化学]