X频段半模圆极化基片集成阵列天线  

X-band integrated array antenna for circular polarization half-mode substrate

作　　者：蔡本晓 刘磊[1] CAI Benxiao;LIU Lei(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China;School of Science,Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]浙江大学电气学院,浙江杭州310027 [2]杭州电子科技大学理学院,浙江杭州310018

出　　处：《传感器与微系统》2020年第2期73-75,共3页Transducer and Microsystem Technologies

摘　　要：提出了一种应用于圆极化(CP)的半模基板集成波导(HSIW)阵列。该阵列采用8单元缝隙组阵辐射。由于阵列天线为半模结构,相比全模结构可减小天线轮廓。为此,需采用椭圆极化辐射的X形缝隙作为阵列单元,通过相邻缝隙的阵列耦合效应来实现阵列天线的圆极化(CP)。对实物天线进行散射参数测量及方向图测试,验证了本文的设计。结果表明:在方向图测试频率范围内,即12.3~12.8 GHz。轴比小于3 dB的频率范围为12.3~12.7 GHz。天线的增益为12 dB,同时旁瓣电平较低(SLL)。天线阵列大小为185 mm×7.8 mm,可用带宽为3.2%。A half-mode substrate integrated waveguide(HSIW)array with circular polarization(CP)radiation is proposed.This array is composed of 8-element slots.Which HMSIW structure,the antenna profile can be reduced compared with the SIW structure.In order to achieve a HMSIW array,the specific designed elliptically polarized X-shaped slots are introduced to implement circular polarization(CP)by array coupling.Finally,the antenna is fabricated,and measured over 12.3~12.8 GHz.Frequency ranges of 12.3~12.7 GHz with axial ratio(AR)of 3 dB.The measured gain is 12 dB with low side lobe level(SLL).The anrenna size is 185 mm×7.8 mm,and the available bandwidth is 3.2%.

关 键 词：圆极化 行波 缝隙阵列 半模基片集成 

分 类 号：TN820[电子电信—信息与通信工程] TP212[自动化与计算机技术—检测技术与自动化装置]