基于离子注入隔离的微缩化发光二极管阵列性能  

Ion implantation isolation based micro-light-emitting diode device array properties

作　　者：高承浩 徐峰 张丽 赵德胜[2] 魏星 车玲娟 庄永漳 张宝顺[2] 张晶[1] Gao Cheng-Hao;Xu Feng;Zhang Li;Zhao De-Sheng;Wei Xing;Che Ling-Juan;Zhuang Yong-Zhang;Zhang Bao-Shun;Zhang Jing(Institute of Optoelectronic Engineering,Changchun University of Science and Technology,Changchun 085202,China;Department of Physics,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Institute of Opto-Electronic,Nanjing University&Yangzhou,Yangzhou 225009,China)

机构地区：[1]长春理工大学光电工程学院,长春085202 [2]中国科学院苏州纳米技术与纳米仿生研究所,纳米加工平台,苏州215123 [3]南京大学扬州光电研究院,扬州225009

出　　处：《物理学报》2020年第2期234-240,共7页Acta Physica Sinica

基　　金：吉林省重大科技招标专项(批准号:20170203014G);国家自然科学基金(批准号:U1830112,61774014);江苏省博士后科研资助计划(批准号:2018K008C);苏州市重点产业技术创新项目(批准号:SYG201928)资助的课题~~

摘　　要：基于F离子注入隔离技术实现一种新型微缩化发光二极管(micromicro-LED)阵列器件,并系统研究注入能量及发光孔径对micro-LED阵列器光电性能的影响.研究结果表明:相比于F离子50 ke V单次注入器件, 50/100 ke V两次注入器件具有更好的光电性能,器件反向漏电降低8.4倍,光输出功率密度提升1.3倍.同时,在不同的发光孔径(6, 8, 10μm)条件下,器件反向漏电流均为3.4×10–8 A,但正向工作电压随孔径增大而减小,分别为3.3, 3.1, 2.9 V.此外,器件不同发光孔径的有效发光面积比(实际发光面积与器件面积之比)分别为85%, 87%, 92%.与传统台面刻蚀micro-LED器件相比,离子注入隔离技术实现的micro-LED器件具有较低反的向漏电流密度、较高的光输出密度及有效发光面积比.Compared with conventional light-emitting diode(LED), micro-LED has excellent photo-electric properties such as high current density, light output power density, light response frequency. It has widespread application prospects in the field of light display, optical tweezers, and visible light communication. However, dry etching inevitably leads the sidewall to be damaged, which results in the degradation of device properties. In this letter,a micro-LED array device based on F ions implantation isolation technology is presented to avoid damaging the sidewall. We systemically investigate the influence of fluorine ion implantation energy and light-emitting apertures on the photoelectric properties of the micro-LED array device by testing the current-voltage characteristic and light output power. The investigation results show that comparing with F ion 50 ke V single implantation device, the reverse leakage of 50/100 ke V double implantation device decreases by 8.4 times and the optical output density increases by 1.3 times. When the light-emitting apertures are different(6, 8, 10 μm respectively), the reverse leakage current remains constant, and the forward operating voltage decreasesfrom3.3 V to 3.1 V and to 2.9 V with the increase of the aperture. Besides, the available area ratio, i.e. the ratio of actual light-emitting area to device area of single micro-LED with different light-emitting apertures are 85%,87%, and 92%, respectively. The electrical isolation of the micro-LED array is realized by ion implantation isolation technology, and the micro-LED has some advantages over the conventional mesa etching micro-LED device, such as low reverse leakage current density, high optical output power density, and high effective lightemitting area ratio.

关 键 词：微缩化发光二极管阵列 离子注入隔离 注入能量 发光孔径 

分 类 号：TN312.8[电子电信—物理电子学]