GaAs材料非平衡热电子的瞬态输运及其光电导特性  

Characteristics of The Photoconductivity and Transient Transport on Non-equilibrium Hot-electron in GaAs Materials

作　　者：薛红[1] 席彩萍[1] XUE Hong;XI Caiping(School of Physics and Electrical Engineering,Weinan Teachers University,Weinan 714099,CHN)

机构地区：[1]渭南师范学院物理与电气工程学院

出　　处：《半导体光电》2019年第6期826-829,856,共5页Semiconductor Optoelectronics

基　　金：陕西省军民融合研究规划项目(16JMR06);陕西省教育厅科研计划项目(16JK1277);渭南师范学院科研计划项目(2018JYKX003)

摘　　要：根据能带电子输运理论,对光激发热电子的产生、弛豫、复合过程进行了分析,并利用蒙特卡罗方法对不同电场中热电子输运的漂移速度瞬变特性进行了模拟。在稳态条件下,光电导及其相应的光电特性主要决定于复合过程;而在强电场和高激发状态下,则主要决定于热电子的行为。实验选用横向型GaAs光电导开关,在一定的偏置电压条件下输出线性与非线性两种不同模式的电脉冲,实验结果与理论一致。According to the electron transport theory of energy band,the process of generation,relaxation and recombination of photoexcited hot-electrons was analyzed,and the transient properties of drift velocity of the hot-electron in different electric fields were simulated by Monte Carlo method.The photoconductance and its corresponding photoelectric characteristics are mainly determined by the composite process under steady-state conditions,while determined by the behavior of hot-electrons under the state of strong electric field and high excitation.Transverse GaAs photoconductance switch was used in the experiment,the linear and nonlinear electrical pulses of two different modes were output under a certain bias voltage,and the experiment accords with the theory.

关 键 词：热电子 光电导 瞬态输运 

分 类 号：TN256[电子电信—物理电子学]