检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:张喜生[1] 晏春愉[1] 吴体辉[1] 李霖峰[1] 郭俊华[1] 姚陈忠[1] ZHANG Xi-sheng;YAN Chun-yu;WU Ti-hui;LI Lin-feng;GUO Jun-hua;YAO Chen-zhong(Department of Physics and Technology,Yuncheng University,Yuncheng,Shanxi 044000,China)
机构地区:[1]运城学院物理与电子工程系
出 处:《光子学报》2020年第1期9-17,共9页Acta Photonica Sinica
基 金:国家自然科学基金(Nos.2157230,U180110);山西省科技创新项目(No.2019L0850);山西省科技研究基金(No.201701D211004);运城学院校级科研项目(Nos.CY-2018014,YQ-2019002)~~
摘 要:采用热注入法制备空气稳定性良好的CsPbBrI2量子点,以375 nm的脉冲激光作为激发光源研究其光致发光性能.通过旋涂的方式制备相应薄膜,将其作为光敏层应用到光探测器,并对器件的光电子性能和稳定性进行详细研究.结果表明:CsPbBrI2量子点在635nm附近有强烈的荧光效应,光谱发光峰较窄,半峰宽约为35 nm.CsPbBrI2量子点禁带宽度为1.90eV,制备的探测器光检测带宽从紫外光260nm到红光650 nm,光响应度为0.26 A/W,高开/关比高达104,上升/衰减时间为3.5 ms/3.5 ms.在25℃,湿度在25%~35%大气环境下存储60天,性能与初始值相比几乎没有变化.CsPbBrI2量子点具有优异的稳定性、可制备高性能的宽带光检测和易于制造等优点,具备一定的应用前景.CsPbBrI2 Quantum Dots(QDs)with good air stability were prepared by hot injection method.The photoluminescence performance of QDs was studied using 375 nm pulsed laser as excitation source.Photodetectors(PD)based on air-stable CsPbBrI2 QDs were designed and fabricated using a facial spin-coating method.The optoelectronic properties and stability of the devices were also studied in detail.The results show that the quantum dots have strong fluorescence effect near 635 nm,the spectral luminescence peak is relatively narrow,and the half-peak width is about 35 nm.The band gap of CsPbBrI2 quantum dots is 1.90 eV.As a result,the PDs are capable of broad bandwidth photodetection from deep UV 260 nm to visible 650 nm region with good photoresponsivity of 0.26 A/W,high on/off ratio up to 104 and very short rise/decay time of 3.5 ms/3.5 ms.Furthermore,the device performance shows very little degradation at 25%~35% humidity and 25℃ over the course of 60 days of storages in ambient condition.The combination of high performance broad bandwidth photodetection,remarkable stability and easy fabrication categorizes the CsPbBrI2 QDs as a kind of very promising semiconducting materials for optoelectronic applications.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.222