压电层体积分数对BTO基复合薄膜磁电性能的影响  

Effect of Volume Fraction of Piezoelectric Layer on Magnetoelectric Properties of BTO-based Composite Films

作　　者：代清平 吴冬妮[2] 韦俊[2] 吕兵[2] 邓朝勇[1] DAI Qingping;WU Dongni;WEI Jun;LYU Bing;DENG Chaoyong(Guizhou Provencial Key Laboratory of Electronic Functional Composites,College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key laboratory of Low Dimensional Condensed Matter Physics of High Educational Institution of Guizhou Province,School of Physics and Electronic Science,Guizhou Normal University,Guiyang 550001,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵州省电子功能复合材料特色重点实验室,贵阳550025 [2]贵州师范大学物理与电子科学学院,贵州普通高等学校低维凝聚态物理重点实验室,贵阳550001

出　　处：《人工晶体学报》2020年第1期44-49,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51762010,51462003);贵州省科学技术基金(黔科合LH字[2016]7217号,黔科合J字[2010]2146,黔科合外G字[2013]7019);贵州省教育厅自然科学研究项目(黔教合KY字[2016]139);贵州师范大学博士启动基金(韦俊)

摘　　要：基于力学参数模型研究了NFO/BTO层状复合薄膜的磁电效应,发现当压电相的体积分数约为0. 47时,磁电耦合性能最好。通过脉冲激光沉积法在掺0. 7%Nb的(001)-STO衬底上生长了不同体积分数比的2-2型NFO/BCZT异质结构的磁电复合薄膜。XRD结果表明:NFO/BCZT磁电复合薄膜均为(00l)择优取向生长结构。通过锁相技术测试了NFO/BCZT复合薄膜的磁电耦合系数,测试结果表明压电相体积稍大于铁磁层体积时,磁电性能最佳。实验结果与理论结果存在一定差异,主要是由于材料实际参数与计算所用参数有差异、界面的非理想耦合无法得到准确的k值以及复合薄膜微观结构、应力等影响。The magnetoelectric effect of layered NFO/BTO composite films was studied based on the mechanical parameter model. It was found that the magnetoelectric coupling performance was best when the volume fraction of piezoelectric phase was about 0. 47. The 2-2 NFO/BCZT films with different volume fraction ratios were grown by pulsed laser deposition with 0. 7% Nb( 001)-STO substrates. The results of XRD show that NFO/BCZT composite films are( 00 l) preferentially grown.The magnetoelectric coupling coefficient of the NFO/BCZT composite film was measured by a lock-in amplifier,the results show that the magnetoelectric performance is best when the volume of piezoelectric phase is slightly larger than that of piezoelectric phase. There are some differences between experimental results and theoretical results,which be mainly due to the difference between the actual parameters of the material and the parameters used in the calculation,the failure to obtain accurate k values due to the non-ideal coupling of the interface,and magnetoelectric effect is affected by microstructure and stress of thin films.

关 键 词：多铁材料 复合薄膜 压电性能 磁电耦合 

分 类 号：O484[理学—固体物理]