A Large Dynamic Range Floating Memristor Emulator With Equal Port Current Restriction  

作　　者：Yifei Pu Bo Yu 

机构地区：[1]Computer Science,Sichuan University,Chengdu 610065,China [2]College of Physics and Engineering,Chengdu Normal University,Chengdu 611130,China

出　　处：《IEEE/CAA Journal of Automatica Sinica》2020年第1期237-243,共7页自动化学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(2018YFC0830300);the National Natural Science Foundation of China(61571312);the Science and Technology Support Project of Chengdu PU Chip Science and Technology Co.,Ltd

摘　　要：In this paper, a large dynamic range floating memristor emulator(LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor(VCLR). Since real memristors have not been largely commercialized until now, the application of a LDRFME to memristive systems is reasonable. Motivated by this need, this paper proposes an achievement of a LDRFME based on a feasible transistor model. A first circuit extends the voltage range of the triode region of an ordinary junction field effect transistor(JFET). The idea is to use this JFET transistor as a tunable linear resistor. A second memristive non-linear circuit is used to drive the resistance of the first JFET transistor. Then those two circuits are connected together and, under certain conditions, the obtained "resistor" presents a hysteretic behavior,which is considered as a memristive effect. The electrical characteristics of a LDRFME are validated by software simulation and real measurement, respectively.In this paper, a large dynamic range floating memristor emulator(LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor(VCLR). Since real memristors have not been largely commercialized until now, the application of a LDRFME to memristive systems is reasonable. Motivated by this need, this paper proposes an achievement of a LDRFME based on a feasible transistor model. A first circuit extends the voltage range of the triode region of an ordinary junction field effect transistor(JFET). The idea is to use this JFET transistor as a tunable linear resistor. A second memristive non-linear circuit is used to drive the resistance of the first JFET transistor. Then those two circuits are connected together and, under certain conditions, the obtained "resistor" presents a hysteretic behavior,which is considered as a memristive effect. The electrical characteristics of a LDRFME are validated by software simulation and real measurement, respectively.

关 键 词：Floating voltage-controlled linear resistor fracmemristance fracmemristor two-port ordinary memristor three-port mirror memristor 

分 类 号：TN60[电子电信—电路与系统]