检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:Xiao-Yi Li Jing-Bin Lu Ren-Zhou Zheng Yu Wang Xu Xu Yu-Min Liu Rui He
机构地区:[1]College of Physics,Jilin University,Changchun 130012,China [2]East China University of Technology,Nanchang 330013,China
出 处:《Nuclear Science and Techniques》2020年第2期55-66,共12页核技术(英文)
基 金:supported by the National Major Scientific Instruments and Equipment Development Projects(No.2012YQ240121);National Natural Science Foundation of China(No.11075064)
摘 要:Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were obtained using Monte Carlo simulations.For the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest Isc.The overall electrical performance of PN junctions is better than that of Schottky diodes.The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries, in which 0.101121 Ci 63Ni was selected as the beta source. The time-related electrical properties were obtained using Monte Carlo simulations. For the n-type ZnO, the Pt/ZnO Schottky diode had the highest energy conversion efficiency, and the Ni/ZnO Schottky diode had the largest Isc. The overall electrical performance of PN junctions is better than that of Schottky diodes. The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices, coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors, Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.
关 键 词:Beta voltaic effect Zinc oxide Time-related properties PN junction Schottky diode Monte Carlo simulation
分 类 号:TN311.7[电子电信—物理电子学] TM918[电气工程—电力电子与电力传动]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.15