低侧向效应MEMS压阻式加速度传感器  

Research on Low Transverse Effect MEMS Piezoresistive Accelerometer

作　　者：王鹏 杨帆 王楠 王明武 梁应选 WANG Peng;YANG Fan;WANG Nan;WANG Ming-wu;LIANG Ying-xuan(Mechanical Engineering Institute,Shaanxi University of Technology,Shanxi Key Laboratory of Industrial Automation,Hanzhong 723000,China)

机构地区：[1]陕西理工大学机械工程学院陕西省工业自动化重点实验室

出　　处：《仪表技术与传感器》2020年第1期17-22,共6页Instrument Technique and Sensor

基　　金：国家自然科学基金项目(51605269);陕西理工大学人才启动项目(SLGQD1812);陕西省教育厅自然类专项项目(18JK0145)

摘　　要：MEMS压阻式加速度传感器是目前最常见的测振器件之一。在某些特殊环境下,加速度信号组成较为复杂,例如机床主轴振动测试系统,可能有多方向加速度信号同时施加到传感器,这就要求设计的传感器具有较低的横向效应,即较小的横向交叉干扰,因此文中研制了一种可以从理论上消除传感器自身横向交叉干扰的MEMS压阻式加速度传感器。文中采用新型的复合八梁结构作为传感器的敏感元件模型,并利用敏感结构上的应力分布规律优化传感器的信号检测电路,从理论上消除了传感器的横向交叉干扰;通过MEMS加工技术加工了传感器的芯片结构,并进行了封装和相关性能测试实验。实验结果表明,所设计的传感器具有不超过1%的横向交叉干扰,1.798 mV/g的测量灵敏度以及14 kHz的固有频率。MEMS piezoresistive accelerometer is one of the most common vibration detectors at present.In some special circumstances,the acceleration signal is relatively complex,for example,there may be more direction acceleration signals applied to the sensor at the same time in machine tool spindle vibration test system,which requires the design of the sensor has a lower transverse effect,that is small transverse cross interference.So this paper developed a MEMS piezoresistive accelerometer with low transverse effect.A novel structure named EB structure was proposed as the sensitivity structure of the designed sensor.The signal detection circuit of the sensor was optimized by the stress distribution on the sensitive structure for eliminating the transverse effect of the sensor.The sensor chip was processed by MEMS processing technology,and the packaging and related performance test experiments were carried out.Experimental results show that the designed sensor has no more than 1%transverse cross interference,1.798 mV/g measurement sensitivity and 14 kHz natural frequency.

关 键 词：加速度传感器 侧向效应 复合八梁 惠斯登电桥 

分 类 号：TH39[机械工程—机械制造及自动化]