Fabrication of flexible AlGaInP LED  

作　　者：Qiaoli Liu Yajie Feng Huijun Tian Xiaoying He Anqi Hu Xia Guo 

机构地区：[1]School of Electronic Engineering,Beijing University of Posts and Telecommunications,Beijing 100876,China [2]School of Information,Beijing University of Technology,Beijing 100124,China [3]Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China

出　　处：《Journal of Semiconductors》2020年第3期36-38,共3页半导体学报（英文版）

基　　金：supported by the National Key R&D Program of China (2016YFB0400603)

摘　　要：Flexible light-emitting diodes(LEDs)are highly desired for wearable devices,flexible displays,robotics,biomedicine,etc.Traditionally,the transfer process of an ultrathin wafer of about 10–30μm to a flexible substrate is utilized.However,the yield is low,and it is not applicable to thick GaN LED chips with a 100μm sapphire substrate.In this paper,transferable LED chips utilized the mature LED manufacture technique are developed,which possesses the advantage of high yield.The flexible LED array demonstrates good electrical and optical performance.Flexible light-emitting diodes(LEDs) are highly desired for wearable devices, flexible displays, robotics, biomedicine,etc. Traditionally, the transfer process of an ultrathin wafer of about 10–30 μm to a flexible substrate is utilized. However, the yield is low, and it is not applicable to thick Ga N LED chips with a 100 μm sapphire substrate. In this paper, transferable LED chips utilized the mature LED manufacture technique are developed, which possesses the advantage of high yield. The flexible LED array demonstrates good electrical and optical performance.

关 键 词：light-emitting diodes(LEDs) FLEXIBLE TRANSFER performance 

分 类 号：TN312.8[电子电信—物理电子学]