Simulation analysis of a high efficiency GaInP/Si multijunction solar cell  

作　　者：M.Benaicha L.Dehimi F.Pezzimenti F.Bouzid 

机构地区：[1]Laboratory of Metallic and Semiconductor Materials,University of Biskra,Biskra 07000,Algeria [2]Faculty of Science,University of Batna,Batna 05000,Algeria [3]DIIES-Mediterranea University of Reggio Calabria,Reggio Calabria 89122,Italy [4]UDCMA-Research Center in Industrial Technologies,Algiers 16014,Algeria

出　　处：《Journal of Semiconductors》2020年第3期54-58,共5页半导体学报（英文版）

摘　　要：The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures.In particular,to interconnect the bottom and top sub-cells of the monolithic tandem,a gallium arsenide(GaAs)-based tunnel-junction,i.e.GaAs(n+)/GaAs(p+),which assures a low electrical resistance and an optically low-loss connection,has been considered.The J–V characteristics of the single junction cells,monolithic tandem,and mechanically stacked structure have been calculated extracting the main photovoltaic parameters.An analysis of the tunnel-junction behaviour has been also developed.The mechanically stacked cell achieves an efficiency of 24.27%whereas the monolithic tandem reaches an efficiency of 31.11%under AM1.5 spectral conditions.External quantum efficiency simulations have evaluated the useful wavelength range.The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+)tunnel junction.The solar power conversion efficiency of a gallium indium phosphide(Ga In P)/silicon(Si) tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures. In particular, to interconnect the bottom and top sub-cells of the monolithic tandem, a gallium arsenide(Ga As)-based tunnel-junction,i.e. Ga As(n+)/Ga As(p+), which assures a low electrical resistance and an optically low-loss connection, has been considered. The J–V characteristics of the single junction cells, monolithic tandem, and mechanically stacked structure have been calculated extracting the main photovoltaic parameters. An analysis of the tunnel-junction behaviour has been also developed. The mechanically stacked cell achieves an efficiency of 24.27% whereas the monolithic tandem reaches an efficiency of 31.11% under AM1.5 spectral conditions. External quantum efficiency simulations have evaluated the useful wavelength range. The results and discussion could be helpful in designing high efficiency monolithic multijunction Ga In P/Si solar cells involving a thin Ga As(n+)/Ga As(p+) tunnel junction.

关 键 词：GaInP/Si tandem solar cells power efficiency numerical simulations 

分 类 号：TM914.4[电气工程—电力电子与电力传动]