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作 者:王阿敏[1] 戴景杰[1] 申亚强 褚兆云 WANG Amin;DAI Jingjie;SHEN Yaqiang;CHU Zhaoyun(Qingdao Binhai University,Qingdao 266555,China)
机构地区:[1]青岛滨海学院
出 处:《电镀与涂饰》2020年第4期183-187,共5页Electroplating & Finishing
基 金:山东省高校科研计划项目(J18KB005,J18KA030,J18KA047);横向课题(JSFW201905150006)
摘 要:针对Cu/金刚石复合材料表面电绝缘性差的缺点,利用多弧离子镀技术在Cu/金刚石复合材料表面镀AlN膜层,基体偏压分别为−200、−300和−400 V。利用X射线衍射和扫描电镜分析了膜层的物相和微观组织形貌,利用激光导热仪和矢量网络分析仪分析了膜层的热导率和电绝缘性。结果表明:AlN在(111)面择优生长,在(200)、(220)晶面取向生长。随偏压增加,AlN膜层颗粒先趋于细小、致密和均匀化,继续增加偏压则膜层内颗粒聚集长大,并出现凹坑。镀AlN膜层后,Cu/金刚石复合材料的热导率无显著变化,但其表面电绝缘性大大提升。以偏压为−300 V时所得AlN膜层最致密均匀,电绝缘性最优。In view of the poor electrical insulation of the Cu/diamond composite surface,an AlN coating was prepared on it by multi-arc ion plating technology at a substrate bias of-200 V,-300 V,or-400 V.The phase constitution and microstructure of the coating were characterized by X-ray diffraction and scanning electron microscopy,and its thermal conductivity and electrical insulation were analyzed using laser thermal conductivity tester and vector network analyzer.The results showed that AlN grows preferentially at(111)plane and is(200)and(220)plane-oriented.With the increasing of substrate bias,the particles of AlN coating tend to be fine,compact,and uniform initially,and then agglomerate and become coarse in company with the formation of pits.The thermal conductivity of Cu/diamond composites was affected slightly after ion plating with AlN,but its electrical insulation was improved greatly.The AlN coating ion-plated at a substrate bias of 300 V has the most compact and uniform structure and the best electrical insulation performance.
关 键 词:铜/金刚石复合材料 氮化铝 多弧离子镀 基体偏压 绝缘性
分 类 号:TG174[金属学及工艺—金属表面处理]
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