基于65 nm标准CMOS工艺的3.0 THz探测器  

A 3.0 THz detector in 65 nm standard CMOS process

作　　者：方桐 刘力源[1,3] 刘朝阳 冯鹏[1,3] 李媛媛 刘俊岐[2,3] 刘剑 吴南健[1,3] FANG Tong;LIU Li-Yuan;LIU Zhao-Yang;FENG Peng;LI Yuan-Yuan;LIU Jun-Qi;LIU Jian;WU Nan-Jian(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [2]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [3]中国科学院大学材料与光电研究中心,北京100049

出　　处：《红外与毫米波学报》2020年第1期56-64,共9页Journal of Infrared and Millimeter Waves

基　　金：国家重点研发计划资助(2016YFA0202200);中国科学院青年创新促进会计划(2016107);北京市科技计划项目(Z181100008918009)~~

摘　　要：基于Dyakonov和Shur等离子体波振荡原理设计并流片制备了一种采用65 nm标准CMOS工艺的3.0THz探测器,探测器包括贴片天线、NMOS场效应晶体管、匹配网络及陷波滤波器。探测器在室温条件下可达到526 V/W的响应率(Rv)和73 pW/Hz1/2的噪声等效功率(NEP)。采用该探测器和步进电机搭建了太赫兹扫描成像系统,获得了太赫兹源出射光斑的远场形状,光斑的半高宽(FWHM)为240μm;并对聚甲醛牙签和树叶进行了扫描成像实验,结果表明CMOS太赫兹探测器在成像领域有潜在的应用前景。A 3.0 THz detector based on plasma-wave theory proposed by Dyakonov and Shur was designed and fabricated in 65 nm standard CMOS process,the detector consists of a patch antenna,a NMOS field effect transistor,a matching network,and a notch filter.The detector can achieve a roomtemperature responsivity(Rv)of 526 V/W and a noise equivalent power(NEP)of 73 pW/Hz1/2.The terahertz scanning imaging system was built with the detector and stepper motor,and the far-field shape of the terahertz source beam was obtained,the full width at half maximum(FWHM)of the beam is 240μm;and the image of the polyformaldehyde toothpick and tree leaf were obtained through the scanning imaging system,it shows that CMOS terahertz detectors have potential applications in the imaging field.

关 键 词：CMOS 太赫兹 太赫兹成像 太赫兹探测器 

分 类 号：TN386.1[电子电信—物理电子学]