标准测试条件下晶硅电池输出参数的不确定度  

Uncertainty of the output parameters of c-Si solar cells under standard testing conditions

作　　者：陆晓东 李禹阔 伦淑娴 高洁 王欣欣 张宇峰 LU XiaoDong;LI YuKuo;LUN ShuXian;GAO Jie;WANG XinXin;ZHANG YuFeng(College of New Energy,Bohai University,Jinzhou 121000,China)

机构地区：[1]渤海大学新能源学院

出　　处：《中国科学：技术科学》2019年第12期1523-1533,共11页Scientia Sinica(Technologica)

基　　金：国家自然科学基金(批准号:11304020,61773074)资助项目

摘　　要：以标准测试条件下晶硅电池输出参数为参考,研究了实际测试条件下,载片台与测试电池片之间热接触性质不同时,晶硅电池内部温度分布和输出参数的变化情况.研究表明,当测试的晶硅电池片与载片台之间形成良好的热接触时,相对标准测试条件,电池内部产生的温度漂移很小,测试电池输出参数VOC, JSC, FF和η的不确定度分别为0.0037%, 0.000196%, 0.000845%和0.0044%;当测试的晶硅电池片与载片台之间未形成良好的热接触时,相对标准测试条件,电池内部产生的温度漂移最大可达9.5℃,测试电池输出参数VOC, JSC, FF和η的不确定度分别为0.1644%, 0.0038%, 0.0533%和0.2134%.Based on the output parameters of c-Si solar cells under standard testing conditions(STC), the variations in their temperature distributions and output parameters were analyzed. This was done under practical testing conditions, and the thermal contact properties between the solar cell wafer and slide holder were also analyzed. The results showed that when good thermal contact was realized between a c-Si solar cell wafer and slide holder, the temperature drifts of the c-Si solar cell compared with STC were small and the uncertainty of VOC, JSC, FF, and η were 0.0037%, 0.000196%, 0.000845%, and 0.0044%, respectively. When poor thermal contact occurred between a c-Si solar cell wafer and slide holder, the maximum temperature drift of the c-Si solar cell compared with STC reached 9.5°C and the uncertainty of VOC, JSC, FF, and η were 0.1644%, 0.0038%, 0.0533%, and 0.2134%, respectively.

关 键 词：晶硅电池 输出参数 环境条件 界面传热系数 不确定度 

分 类 号：TM914.41[电气工程—电力电子与电力传动]