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作 者:Yang Yu Wenjie Hu Qiang Li Qian Shi Yinyan Zhu Hanxuan Lin Tian Miao Yu Bai Yanmei Wang Wenting Yang Wenbin Wang Hangwen Guo Lifeng Yin Jian Shen 郁扬;胡雯婕;李强;时倩;朱银燕;林汉轩;苗田;白羽;王艳梅;杨文婷;王文彬;郭杭闻;殷立峰;沈健(State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433,China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China)
机构地区:[1]State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433,China [2]Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China [3]Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China
出 处:《Chinese Physics B》2020年第1期103-106,共4页中国物理B(英文版)
基 金:Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0300702);Shanghai Municipal Natural Science Foundation,China(Grant Nos.19ZR1402800,18JC1411400,18ZR1403200,and 17ZR1442600);the Program of Shanghai Academic Research Leader,China(Grant Nos.18XD1400600 and 17XD1400400);the China Postdoctoral Science Foundation(Grant Nos.2016M601488 and 2017T100265)
摘 要:We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290% has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.
关 键 词:manganite nanowires tunnel magnetoresistance magnetic force microscope
分 类 号:TB383.1[一般工业技术—材料科学与工程]
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