GaN微电子学的新进展  

New Progress in GaN Microelectronics

作　　者：赵正平[1,2] Zhao Zhengping(China Electronics Technology Group Corporation,Beijing 100846,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司 [2]专用集成电路重点实验室

出　　处：《半导体技术》2020年第1期1-16,36,共17页Semiconductor Technology

摘　　要：进入21世纪后,GaN微电子发展迅速,2011年进入工程化。在5G移动通信等新一代应用的牵引下,GaN微电子的创新更加活跃,正开始步入高新产业的发展阶段。介绍了GaN微电子在新器件结构与工艺、微波混合集成、微波单片集成电路(MMIC)、集成电路和异构集成等方面的最新进展,主要包括新的势垒结构、新的器件结构和工艺、大尺寸Si基器件、高导热金刚石基器件、新的电路拓扑、新的3D集成技术和可靠性研究等,以及在微波电子学和功率电子学两大应用领域的最新成果。分析和评价了SiC基、Si基GaN微电子等的发展态势。After entering the 21st century,GaN microelectronics has developed rapidly,and in 2011,GaN microelectronics turned into engineering.Under the traction of 5 G mobile communication and other new generation applications,the innovation of GaN microelectronics is more active,and it is beginning to enter the development stage of the high-tech industry.The latest progress of GaN microelectronics is introduced in the new device structure and process,microwave hybrid integration,monolithic microwave integrated circuit(MMIC),integrated circuits and heterogeneous integration and so on,including the new barrier,new device structure and process,devices on large size Si wafer,devices on high thermal conductivity diamond,new circuit topology,new 3 D integration technology and reliability research,as well as the latest application achievements in the fields of microwave electronics and power electronics.The development trends of SiC-based and Si-based GaN microelectronics are analyzed and evaluated.

关 键 词：GaN高电子迁移率晶体管(HEMT) 混合集成电路 微波单片集成电路(MMIC) 3D异构集成 D模 E模 功率电子学 微波电子学 

分 类 号：TN304.2[电子电信—物理电子学] TN4