实验参数对激光诱导Cu等离子体特性的影响  

Effects of Experimental Parameters on Properties of Laser-induced Cu Plasma

作　　者：傅院霞[1,2] 徐丽[1] 肖伟[1] FU Yuan-xia;XU Li;XIAO Wei(Department of Science,Bengbu University,Bengbu Anhui 233030;Anhui Province Key Laboratory of Optoelectronic Materials Science and Technology,Anhui Normal University,Wuhu Anhui 241000)

机构地区：[1]蚌埠学院理学院,安徽蚌埠233030 [2]安徽师范大学光电材料科学与技术安徽省重点实验室,安徽芜湖241000

出　　处：《巢湖学院学报》2019年第6期80-85,共6页Journal of Chaohu University

基　　金：国家自然科学基金项目(项目编号:11604003);安徽省高等学校自然科学研究重点项目(项目编号:KJ2019A0857);光电材料科学与技术安徽省重点实验室项目(项目编号:OMST201703)

摘　　要：实验主要研究样品温度(铜片)、ICCD延迟对离子体特性的影响,通过波长为532 nm的激光聚焦到铜片,利用光接收器接收等离子体中原子和离子的发射光谱,从而处理得到光谱图和信噪比图像。结果显示门宽在110 ns到500 ns内,门宽越大,谱线强度以及信噪比越强,再考虑局部热平衡条件,所以门宽为200 ns是最优;延迟在200 ns到800 ns内,可得600 ns的延迟是最优;铜片温度在常温到110℃内改变,铜片温度越高,信噪比越好,所以110℃是最优参数。利用洛伦兹拟合求得谱线强度I的值以及所选取谱线的半高全宽(FWHM)等,从而分别算出所选取的实验参数对应的的Cu等离子体的电子温度以及电子密度,进而得到电子温度和电子密度随着样品温度、延迟的演化趋势。在样品铜片温度处于常温到110℃范围内,Cu等离子体电子温度从4752 K升至7231 K;ICCD延迟在200 ns至800 ns范围内,电子温度从14230 K降至1160 K。实验过程中选取了Cu的波长为465.2 nm的谱线,并查阅出该谱线的电子碰撞系数计算得到电子密度。可得到铜片温度处于常温至110℃时,铜等离子体的电子密度从2.041×10^17 cm^-3升到2.732×10^17 cm^-3;ICCD延迟处于200 ns至800 ns时,电子密度从3.51×10^17 cm^-3下降至2.149×10^17 cm^-3。The sample temperature(copper), ICCD delay influence on laser induced Cu plasma characteristics were studied. Through the wavelength of 532 nm emitting laser focus on the copper, using the optical receiver accept atoms and ions in the plasma emission spectrum, then the spectrum and the signal to noise ratio were obtained. The results are shown as follows: Considering the local heat balance condition and the stronger spectral line and signal-to-noise ratio, from 110 ns to 500 ns, the optimal gate width is 500 ns;from 200 ns to 600 ns, the optimal delay is 600 ns;Copper temperature from room temperature to 110℃, the higher the temperature of the copper, the better the signal-to-noise ratio, so that 110℃ is the optimal parameters. Lorentz fitting and gaussian fitting were used to obtain the intensity I value of the spectral line and the half-height and full width(FWHM) of the selected spectral line, so as to calculate the electron temperature and electron density of the Cu plasma corresponding to the selected experimental parameters, and then obtain the evolution trend diagram of the electron temperature and electron density with the sample temperature and delay. The copper temperature from 20℃ to 110℃, the electron temperature from 4752 K to 7231 K;the delay ranges from 200 ns to 800 ns, and the electron temperature drops from 14230 K to 1160 K. During the experiment, a spectral line with a wavelength of 465.2 nm of Cu was selected, and the electron collision coefficient of the spectral line was consulted to calculate the value of electron density. Then the copper temperature from 20℃ to 110℃, the electron density rose from 2.041 cm^-3 to 2.732 cm^-3;When the delay of ICCD between 200 ns and 800 ns,the electron density decreased from 3.51 cm^-3 to 2.149 cm^-3.

关 键 词：激光诱导Cu等离子体 电子温度 电子密度 样品温度 

分 类 号：O657.3[理学—分析化学]