Self-catalyzed growth of GaSb nanowires for high performance ultraviolet-visible-near infrared photodetectors  

自催化生长GaSb纳米线及其在高性能紫外-可见-近红外光电探测器中的应用（英文）

作　　者：Kai Zhang Ruiqing Chai Ruilong Shi Zheng Lou Guozhen Shen 张凯;柴瑞青;史瑞龙;娄正;沈国震(State Key Laboratory of Superlattices and Microstructures,Institution of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Opto-electronic Engineering,University of Chinese Academy of Sciences,Beijing 100029,China;Hebei Key Lab of Optic-electronic Information and Materials,the College of Physics Science and Technology,Hebei University,Baoding 071002,China)

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institution of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Opto-electronic Engineering,University of Chinese Academy of Sciences,Beijing 100029,China [3]Hebei Key Lab of Optic-electronic Information and Materials,the College of Physics Science and Technology,Hebei University,Baoding 071002,China

出　　处：《Science China Materials》2020年第3期383-391,共9页中国科学（材料科学（英文版）

基　　金：supported by the National Natural Science Foundation of China (61574132 and 61625404)

摘　　要：A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline GaSb nanowires,where Ga droplets were utilized as the catalysts.The as-grown GaSb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm^2 V^-1 s^-1.The photoresponse properties of the GaSb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible substrates.The results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet,visible,to near-infrared region.For the device on rigid substrate,the corresponding responsivity and the detectivity were calculated to be 3.86×10^3 A W-1 and 3.15×10^13 Jones for 500 nm light,and 7.22×10^2 A W-1 and 5.90×10^12 Jones for 808 nm light,respectively,which were the highest value compared with those of other reported Ga1-xInxAsySb1-y structure nanowires.Besides,the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one,but also possessed excellent mechanical flexibility and stability.This study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown GaSb nanowires and the design of functional nano-optoelectronic devices based on GaSb nanowires.本文应用镓金属液滴作为催化剂,采用化学气相沉积方法自催化合成了单晶GaSb纳米线.研究表明该GaSb纳米线为典型的p型半导体,霍尔迁移率为>0.042 cm^2V^-1s^-1.硅基和柔性衬底上构筑的基于GaSb纳米线的光电探测器,具有良好的紫外-可见-近红外宽光谱探测性能.硅基器件对500 nm的可见光响应率可达3.86×10^3A W-1,探测率可达3.15×10^13Jones;柔性器件在保持相似光电性能的同时,具有极好的机械柔韧性和稳定性.本文有助于更好地揭示自催化生长的GaSb纳米线的性能,并为进一步设计基于GaSb纳米线的功能光电器件打下了实验基础.

关 键 词：GaSb nanowires chemical vapor deposition mobility PHOTORESPONSE NEAR-INFRARED flexible 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TH89[机械工程—仪器科学与技术]