片上电子源的研究现状(二)  

Review on On-Chip Electron Sources

作　　者：杨威[1] 魏贤龙[1] YANG Wei;WEI Xian-long(Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing 100871,China)

机构地区：[1]北京大学电子学系纳米器件物理和化学教育部重点实验室

出　　处：《真空》2020年第1期1-10,共10页Vacuum

基　　金：国家自然科学基金(61621061、11874608)

摘　　要：本文主要回顾总结近数十年来片上电子源的研究工作及最新进展,包括场发射片上电子源、内场发射片上电子源以及新型热发射微型片上电子源。本文从这些片上电子源的基本原理、加工制备以及工作性能(包括工作电压、工作真空、发射电流、发射电流密度和发射效率)等方面进行比较,分析各种片上电子源的优劣点,为片上电子源的发展现状做一个简单的总结。The article reviews and summarizes the research works in last decades and recent development of on-chip electron sources including field emission on-chip electron sources,internal field emission on-chip electron sources and new thermionic on-chip electron sources.The article compares the basic principles,fabrication and working performance of such on-chip electron sources,including working voltage,working vacuum,emission current,emission current density and emission efficiency,and analyzes the advantages and disadvantages of various on-chip electron sources.A brief summary of the development status of onchip electron source is made through these analyses.

关 键 词：片上电子源 场发射 内场发射 热发射 

分 类 号：TN32[电子电信—物理电子学]