Mo背电极对CIGS吸收层生长特性的影响  

Effect of Mo Back Electrode on Growth Characteristics of CIGS Absorption Layer

作　　者：张俊敏 高泽冉 赵蔚 于威[1] Zhang Jun-min;Gao Ze-ran;Zhao Wei;Yu Wei

机构地区：[1]河北大学新能源光电器件国家地方联合工程实验室,河北大学物理科学与技术学院,河北保定071002 [2]河北工程大学数理科学与工程学院,河北邯郸056038

出　　处：《化工设计通讯》2020年第2期239-240,共2页Chemical Engineering Design Communications

基　　金：邯郸科技局项目(1723209055-1)

摘　　要：研究了利用单一四元靶材进行一步溅射法制备的CIGS薄膜的特性。研究了工作气压、衬底温度、Mo背电极对CIGS薄膜性能的影响。研究发现,当CIGS直接沉积在玻璃基底上时,一步溅射CIGS薄膜的优先取向和结晶度受工作气压和衬底温度的影响。而在器件制备方面,Mo背电极主导了CIGS薄膜的生长行为,并诱导其形成了较大的CIGS晶粒尺寸和较好的结晶度。最后,采用一步溅射法在0.07~2.66Pa的工作气压下制备了CIGS器件,最高效率达到8.67%。The properties of CIGS films prepared with a single four-element target by one step sputtering were studied.The effects of working air pressure,substrate temperature and Mo back electrode on the properties of CIGS films were studied.We found that when the CIGS directly deposited on the glass substrate,the preferred orientation and crystallinity of the one-step sputtering CIGS films were affected by the working air pressure and substrate temperature.In the aspect of device preparation,Mo back electrode dominates the growth behavior of CIGS film and induces it to form larger CIGS grain size and better crystallinity.Finally,the one-step sputtering method was used to prepare the CIGS device at the working pressure of 0.07-2.66Pa,with the highest efficiency reaching 8.67%.

关 键 词：单一四元靶材 一步溅射法 CIGS 

分 类 号：TM914.4[电气工程—电力电子与电力传动]