基于Keithley 4200A-SCS使用斜率法实现MOS结构QSCV测量的研究  

Research Based on the Keithley 4200A-SCS for Makingthe MOS Structure Quasistatic C-V Measurements with the Ramp Rate Method

作　　者：聂凯[1] Nie Kai(School of Application Engineering,AnHui Business and Technology College,Hefei 231131,China)

机构地区：[1]安徽工商职业学院应用工程学院,安徽合肥231131

出　　处：《梧州学院学报》2019年第6期10-16,共7页Journal of Wuzhou University

基　　金：2015年安徽省大学生创客实验室建设计划项目(2015ckjh143);2017年安徽省大规模在线开放课程(MOOC)示范项目(2017mooc026)。

摘　　要：C-V测量是半导体特征分析与测试的基础。半导体器件参数优劣等常用该测试方法进行判断,文章研究了基于4200A-SCS参数分析平台使用斜率法实现对MOSFET器件进行QSCV测量。相较于传统的需在交流环境下完成的CV测量,该文所述使用斜率法主要是应对在很多应用软件环境中需要在直流条件下实施,即在一个测试频率很低,几乎是直流的条件下操作。通过分析测量结果可辅助工程技术人员进一步优化器件工艺和性能,对工艺参数的检测,失效机理的分析等也都有着重要的参考与借鉴作用。C-V measurement is the basis of semiconductor characteristic analysis and testing.This testing method is often used to judge the parameters of semiconductor devices.In this paper,the ramp rate method is used to measure the QSCV of MOSFET devices based on the 4200 A-SCS parameter analysis platform.Compared with the traditional C-V measurement that needs to be completed in the AC environment,the ramp rate method described in this paper is mainly to be implemented in the DC condition in many application software environments,that is,to test in a rather low frequency,almost DC condition.Through the analysis and measurement results,it can assist engineers to further optimize the device process and performance and provide important reference for the detection of process parameters and the analysis of failure mechanism.

关 键 词：斜率法 QSCV测量 SMU 

分 类 号：TP3[自动化与计算机技术—计算机科学与技术]