硅基锗硅驰豫衬底的外延生长  

Epitaxial growth of strain relaxed SiGe layer on Si substrates

作　　者：陈城钊 李云 邱胜桦 刘翠青 CHEN Chengzhao;LI Yun;QIU Shenghua;LIU Cuiqing(School of Physics and Electronic Engineering,Hanshan Normal University,Chaozhou 521041,China)

机构地区：[1]韩山师范学院物理与电子工程学院,广东潮州521041

出　　处：《材料研究与应用》2020年第1期9-13,共5页Materials Research and Application

基　　金：广东省自然科学基金项目(2016A030307038);广东省教育厅创新强校工程自然科学特色创新项目(2015KTSCX090).

摘　　要：应用低温缓冲层的方法,采用超高真空化学汽相淀积法(UHV/CVD)在硅(100)衬底上外延出应变弛豫的低位错密度的锗硅(SiGe)薄膜,分别采用利用X射线双晶衍射和拉曼光谱仪、原子力显微镜和化学腐蚀位错坑等方法,对薄膜进行分析检测.结果表明,在300 oc低温时Ge量子点缓冲层上生长的SiGe外延层厚度仅为380 nm,弛豫度已达99%,位错密度低于1×10^5 cm^-2,表面无Cross-hatch形貌,表面且粗糙度小于2 nm.High-quality strain relaxed SiGe layer with a low dislocation density has been fabricated on a Si(100)substrate using low temperature buffer layer by ultra-high vacuum chemical vapor deposition system. The microstructure and morphology of the samples were investigated by high-resolution X-ray diffraction, Raman spectra and atomic force microscope, and using a diluted Secco etchant to reveal dislocation content. The results show that the thickness of the SiGe epitaxial layer grown on the Ge quantum dots buffer layer at a low temperature of 300 ℃ with a thickness of 380 nm. The relaxation degree has reached 99%, while the dislocation density is less than 1×10^5 cm^-2 without cross-hatch morphology. A root mean square surface roughness of less than 2 nm is achieved.

关 键 词：硅基锗硅薄膜 驰豫衬底 外延生长 

分 类 号：TN304.054[电子电信—物理电子学]