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作 者:李诺薇 邹维科 种法力[1] LI Nuowei;ZOU Weike;CHONG Fali(College of Mathematics and Physics,Xuzhou University of Technology,Xuzhou Jiangsu 221018,China)
机构地区:[1]徐州工程学院数学与物理科学学院,江苏徐州221018
出 处:《激光杂志》2020年第3期130-133,共4页Laser Journal
基 金:国家自然科学基金项目(No.11875230)。
摘 要:采用当前方法对影响半导体激光器物理特性的因素进行分析时,构建的半导体激光器有限元模型精度较低,得到的分析结果与实际不符,存在分析结果准确率低的问题。提出影响半导体激光器物理特性的影响因素分析方法,通过导热微分方程分析了半导体激光器的导热过程,根据分析结果构建半导体激光器的有限元模型,通过有限元模型对半导体激光器的物理特性进行数值模拟,得到了热沉宽度尺寸、热沉长度尺寸、热沉厚度尺寸和半导体激光器热阻之间的关系。实验结果表明,所提方法构建的半导体激光器有限元模型精度高、分析结果准确率高。When the current method is used to analyze the factors affecting physical characteristics of semiconductor lasers,the finite element model of constructed semiconductor laser has low precision,and the obtained analysis results are inconsistent with the actual ones,and the accuracy of the analysis results is low.The influencing factors affecting the physical characteristics of semiconductor lasers are proposed.The thermal conduction process of semiconductor lasers is analyzed by thermal differential equations.The finite element model of semiconductor lasers is constructed based on the analysis results.The physical properties of semiconductor lasers are numerically simulated by finite element model.The relationships among the heat sink width dimension,the heat sink length dimension,the heat sink thickness dimension,and the thermal resistance of the semiconductor laser.The experimental results show that the finite element model of the semiconductor laser constructed by the proposed method has high precision and high accuracy of analysis results.
分 类 号:TN248.4[电子电信—物理电子学]
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