氮化铝陶瓷金属化技术的探讨  

Discussion on Metallization Technology of AlN Ceramics

作　　者：高陇桥[1] 崔高鹏 刘征[1] GAO Long-qiao;CUI Gao-peng;LIU Zheng(Beijing Vacuum Electronics Research Institute,Beijing 100015,China)

机构地区：[1]北京真空电子技术研究所,北京100015

出　　处：《真空电子技术》2020年第1期32-36,共5页Vacuum Electronics

摘　　要：本文对目前常用的电子陶瓷(例如,氮化铝陶瓷、氧化铍陶瓷、氧化铝陶瓷)的性能和金属化技术进行了初步的比较,提出了氮化铝陶瓷要加强其应用研究,特别是要进一步提高其Mo-Mn法封接强度,论述了氧化铍陶瓷比氮化铝陶瓷DBC技术上的某些优势。The properties and metallization technology of conventional electronic ceramics(such as AlN ceramics,BeO ceramics,Al2O3 ceramics)are compared.It is proposed that the application research of AlN ceramics should be strengthened,especially the sealing strength of Mo-Mn method should be further improved.Some advantages of BeO ceramics compared with AlN ceramics in DBC technology are discussed.

关 键 词：电子陶瓷 陶瓷金属化 陶瓷敷铜板直接结合 

分 类 号：TB756[一般工业技术—真空技术]