Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric  

作　　者：Tao-Tao Que Ya-Wen Zhao Liu-An Li Liang He Qiu-Ling Qiu Zhen-Xing Liu Jin-Wei Zhang Jia Chen Zhi-Sheng Wu Yang Liu 阙陶陶;赵亚文;李柳暗;何亮;丘秋凌;刘振兴;张津玮;陈佳;吴志盛;刘扬(School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China;School of Materials Science and Engineering,Sun Yat-Sen University,Guangzhou 510275,China)

机构地区：[1]School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China [2]School of Materials Science and Engineering,Sun Yat-Sen University,Guangzhou 510275,China

出　　处：《Chinese Physics B》2020年第3期340-345,共6页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program,China(Grant No.2017YFB0402800);the Key Research and Development Program of Guangdong Province,China(Grant No.2019B010128002);the National Natural Science Foundation of China(Grant No.U1601210);the Natural Science Foundation of Guangdong Province,China(Grant No.2015A030312011)。

摘　　要：The effect of high overdrive voltage on the positive bias temperature instability(PBTI)trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT)with LPCVD-SiNx gate dielectric.A higher overdrive voltage is more effective to accelerate the electrons trapping process,resulting in a unique trapping behavior,i.e.,a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence.Combining the degradation of electrical parameters with the frequency–conductance measurements,the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time,new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.The effect of high overdrive voltage on the positive bias temperature instability(PBTI) trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency–conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.

关 键 词：gallium nitride LPCVD-SiNx MIS-HEMTs overdrive voltage TRAPPING BEHAVIOR 

分 类 号：TN386[电子电信—物理电子学]