Influence of Zr(50)Cu(50) thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films  

作　　者：Bao-Qing Zhang Gao-Peng Liu Hai-Tao Zong Li-Ge Fu Zhi-Fei Wei Xiao-Wei Yang Guo-Hua Cao 张宝庆;刘高鹏;宗海涛;付丽歌;魏志飞;杨晓炜;曹国华(School of Materials Science and Engineering,Henan Polytechnic University,Jiaozuo 454000,China;School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo 454000,China)

机构地区：[1]School of Materials Science and Engineering,Henan Polytechnic University,Jiaozuo 454000,China [2]School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo 454000,China

出　　处：《Chinese Physics B》2020年第3期361-368,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.51571085);the Key Science and Technology Program of Henan Province,China(Grant No.19212210210);the Foundation of Henan Educational Committee,China(Grant No.13B430019);the Henan Postdoctoral Science Foundation,China。

摘　　要：Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.Aluminum-doped ZnO（AZO） thin films with thin film metallic glass of Zr50Cu50 as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show（100）and（002） unique preferential orientations, respectively. After inserting Zr50Cu50 layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO（100 nm）/Zr50Cu50（4 nm） film first increases and then decreases, and the infrared transmittance is improved. The AZO（100 nm）/Zr50Cu50（4 nm） film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.

关 键 词：aluminum-doped ZnO(AZO) Zr(50)Cu(50) thin film METALLIC glass optoelectrical properties morphology 

分 类 号：TB383.2[一般工业技术—材料科学与工程] O469[理学—凝聚态物理]