Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films  

作　　者：Ailing Chang Yichen Mao Zhiwei Huang Haiyang Hong Jianfang Xu Wei Huang Songyan Chen Cheng Li 常爱玲;毛亦琛;黄志伟;洪海洋;徐剑芳;黄巍;陈松岩;李成(Department of Physics,OSED,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China;Xiamen University Tan Kah Kee College,Zhangzhou 363105,China)

机构地区：[1]Department of Physics,OSED,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China [2]Xiamen University Tan Kah Kee College,Zhangzhou 363105,China

出　　处：《Chinese Physics B》2020年第3期427-432,共6页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200103)。

摘　　要：Hafnium disulfide(HfS2) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS2 nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf(N(CH3)(C2H5))4 and H2S as the reaction precursors. Selflimiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS2 nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS2 crystallinity, while causing crystallization of the mixed HfO2 above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS2 nanocrystals for electronic device or electrochemical applications.Hafnium disulfide（HfS2） is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS2 nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf（N（CH3）（C2H5））4 and H2S as the reaction precursors. Selflimiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS2 nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS2 crystallinity, while causing crystallization of the mixed HfO2 above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS2 nanocrystals for electronic device or electrochemical applications.

关 键 词：HfS2 ATOMIC LAYER DEPOSITION surface MORPHOLOGY 

分 类 号：TB383.2[一般工业技术—材料科学与工程] O53[理学—等离子体物理]