A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector  

作　　者：Xuan-Zhang Li Ling Sun Jin-Lei Lu Jie Liu Chen Yue Li-Li Xie Wen-Xin Wang Hong Chen Hai-Qiang Jia Lu Wang 李炫璋;孙令;鲁金蕾;刘洁;岳琛;谢莉莉;王文新;陈弘;贾海强;王禄(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Detector Technology Laboratory,Beijing Institute of Space Mechanics&Electricity,Beijing 100076,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Detector Technology Laboratory,Beijing Institute of Space Mechanics&Electricity,Beijing 100076,China [4]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Chinese Physics B》2020年第3期468-472,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11574362,61210014,11374340,and 11474205);the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission of China(Grant No.Z151100003515001);the National Key Technology R&D Program of China(Grant No.2016YFB0400302)。

摘　　要：We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.

关 键 词：photodetector energy band calculation InAsSb/AlSb/AlGaSb quantum well interband transition 

分 类 号：TN215[电子电信—物理电子学]