短波红外InGaAs焦平面探测器研究进展  

Developments of short-wave infrared InGaAs focal plane detectors

作　　者：李雪[1,2] 邵秀梅[1,2] 李淘[1,2] 程吉凤[1,2] 黄张成[1,2] 黄松垒[1,2] 杨波[1,2] 顾溢[1,2] 马英杰 龚海梅[1,2] 方家熊 Li Xue;Shao Xiumei;Li Tao;Cheng Jifeng;Huang Zhangcheng;Huang Songlei;Yang bo;Gu Yi;Ma Yingjie;Gong Haimei;Fang Jiaxiong(State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《红外与激光工程》2020年第1期56-63,共8页Infrared and Laser Engineering

基　　金：国家重点基础研究发展计划(2012CB619200)。

摘　　要：短波红外InGaAs焦平面探测器具有探测率高、均匀性好等优点,在航天遥感、微光夜视、医疗诊断等领域具有广泛应用。近十年来,中国科学院上海技术物理研究所围绕高灵敏度常规波长(0.9~1.7μm)InGaAs焦平面、延伸波长(1.0~2.5μm)InGaAs焦平面以及新型多功能InGaAs探测器取得了良好进展。在常规波长InGaAs焦平面方面,从256×1、512×1元等线列向320×256、640×512、4000×128、1280×10^24元等多种规格面阵方面发展,室温暗电流密度优于5 n A/cm2,室温峰值探测率优于5×10^12cm·Hz1/2/W。在延伸波长InGaAs探测器方面,发展了高光谱高帧频10^24×256、10^24×512元焦平面,暗电流密度优于10 n A/cm^2和峰值探测率优于5×10^11cm·Hz1/2/W@200 K。在新型多功能InGaAs探测器方面,发展了一种可见近红外响应的InGaAs探测器,通过具有阻挡层结构的新型外延材料和片上集成微纳陷光结构,实现0.4~1.7μm宽谱段响应,研制的320×256、640×512焦平面组件的量子效率达到40%@0.5 m、80%@0.8 m、90%@1.55 m;发展了片上集成亚波长金属光栅的InGaAs偏振探测器,其在0°、45°、90°、135°的消光比优于20:1。SWIR InGaAs FPAs are widely applied to space remote sensing,low light level night vision and medical diagnostics due to the high detectivity and uniformity.Highly sensitive NIR InGaAs FPAs with response covering from 0.9μm to 1.7μm,the extended SWIR InGaAs FPAs with the cutoff wavelengths from 1.0μm to 2.5μm,and other novel SWIR InGaAs FPAs have been studied respectively at Shanghai Institute of Technical Physics of Chinese Academy of Sciences over the past ten years.NIR InGaAs FPAs have developed from some typical line ar 256×1,512×1 FPAs to 2 D format320×256,640×512,4000×128 and 1280×10^24 FPAs.Typically,the dark current density was about5 n A/cm^2 and the peak detectivity was superior to 5×1012cm·Hz1/2/W at room temperature.2 D format10^24×256,10^24×512 extended wavelength InGaAs FPAs with high frame rate were also developed for the hyperspectral applications at SITP.The dark current density drops to 10 n A/cm2 and peak detectivity was over 5×1012 cm·Hz1/2/W at 200 K.By using novel epitaxial materials and the light trapping structures,the visible-NIR In GaAs FPAs for wavelength band of 0.4-1.7μm have also been developed.The as-prepared 320×256,640×512 In GaAs FPAs were obtained with quantum efficiency superior to 40%@0.5 m,80%@0.8 m and 90%@1.55 m.For polarimetric detecting,InGaAs devices integrated with subwavelength metal grating of different angles(0°,45°,90°,135°)have been developed,which exhibit the extinction ratio of greater than 20:1.

关 键 词：INGAAS 焦平面 短波红外 暗电流 探测率 

分 类 号：TN215[电子电信—物理电子学]