基于伏安特性方程的CMOS数字电路电压传输特性研究  

Voltage Transmission Characteristic Studies of CMOS Digital Circuits Based on Volt-Ampere Characteristic Equation

作　　者：陆建恩 LU Jian-en(Jiangsu Vocational and Technical College of Information,Wuxi Jiangsu 214153)

机构地区：[1]江苏信息职业技术学院,江苏无锡214153

出　　处：《数字技术与应用》2020年第1期90-93,共4页Digital Technology & Application

摘　　要：本文从MOS晶体管的伏安特性方程出发,以CMOS反相器为例,以有别于传统定性或者半定量的分析方法,详细研究了CMOS电路的电压传输特性,并以分段函数的形式给出了该传输特性曲线的函数表达式,其数值模拟结果与实际测量结果相当吻合。Based on the volt ampere characteristic equation of MOS transistor, taking CMOS inverter as an example, this paper studies the voltage transmission characteristic of CMOS circuit in detail, which is different from the traditional qualitative or semi quantitative analysis method, and gives the function expression of the transmission characteristic curve in the form of subsection function. The numerical simulation results are quite consistent with the actual measurement results.

关 键 词：集成电路 CMOS数字电路 电压传输特性 

分 类 号：TN386[电子电信—物理电子学]