Eu^3+掺杂对Ba2Mg(BO3)2∶Eu^3+荧光粉基质晶格及发光性质的影响  

Effect of Eu^3+Doping on Host Lattice and Luminescent Properties of Ba2Mg(BO3)2∶Eu^3+Phosphor

作　　者：熊晓波[1] 李江春[1] XIONG Xiaobo;LI Jiangchun(Hubei Key Laboratory of Forensic Science, Hubei University of Police, Wuhan 430034, China)

机构地区：[1]湖北警官学院,法庭科学湖北省重点实验室,武汉430034

出　　处：《人工晶体学报》2020年第3期452-456,共5页Journal of Synthetic Crystals

基　　金：法庭科学湖北省重点实验室开放课题(2018KFKT05);纳米矿物材料及应用教育部工程中心开放课题(NGM2019KF011);湖北省教育厅科学研究计划指导性项目(B2019207);湖北警官学院科研计划项目自选课题(2019007)。

摘　　要：系统研究了Ba2Mg(BO3)2∶Eu^3+荧光粉的高温固相法制备工艺条件,发现在900℃下保温3 h制得的样品的发光性能最好。研究了Eu^3+掺杂浓度对基质晶格环境和发光性质的影响,当Eu^3+浓度较低时,荧光粉在594 nm的发射峰强度最大,随着Eu^3+掺杂浓度的增加,Eu^3+偏离对称中心的程度越来越大,当Eu^3+浓度超过3at%时,荧光粉在613 nm的发射峰强度开始急剧增强,浓度达到3.5at%时,613 nm的发射开始占主导,这是由于晶体结构的扭曲程度导致晶格对称性发生了较大的改变,释放了更多禁戒的5D0→7F2电偶极跃迁。制备的橙色荧光粉可以被近紫外InGaN芯片有效激发,应用于白光LED。The preparation conditions of phosphor based on Ba2Mg(BO3)2 host was systematically investigated,effect of Eu^3+content on the host lattice environment and luminescent properties of phosphor as well.The research results show that Ba2+is increasingly deviate from symmetric center with increase of Eu^3+content.When Eu^3+content is very low,the maximum emission peak of the Ba2Mg(BO3)2∶Eu^3+is at 594 nm.However,Eu^3+content is over 3at%,the emission intensity at 613 nm peak is dramatically enhanced,and is more than that of at the peak of 594 nm in case Eu^3+content is over 3.5at%,which is attributed to the degree of distortion of crystal structure,and result in obvious change of the symmetric properties of the crystal lattice,thus forbidden electric dipolar 5D0→7F2 transition is more released.The prepared orange phosphor can be effectively excited by near ultraviolet InGaN chip and applied to white LED.

关 键 词：Ba2Mg(BO3)2∶Eu^3+ 荧光粉 晶格 发光性质 

分 类 号：O482.31[理学—固体物理]