Applying Silver Tellurite to Optimize Ag/Si Contact Interface in Silicon Solar Cells  

作　　者：LIU Jian ZHAO Qing-He YANG Lu-Yi LIN Yuan PAN Feng 

机构地区：[1]School of Advanced Materials,Peking University,Shenzhen Graduate School,Shenzhen 518055,China

出　　处：《Chinese Journal of Structural Chemistry》2020年第3期395-400,375,共7页结构化学（英文）

基　　金：financially supported by Soft Science Research Project of Guangdong Province(No.2017B030301013);Guangdong Innovative Team Program(No.2013N080);Shenzhen Science and Technology Research Grant(No.JSGG20170414163208757)。

摘　　要：Nowadays,researches on developing new etching materials to optimize the Ag/Si contact interface in silicon solar cells(SSCs)are rare,which alleviates the further development of SSCs.In this study,silver tellurite(Ag2 TeO3,monoclinic,P21/a(14))is synthesized and developed as an excellent etching material in SSCs.The Ag2TeO3 displays a low starting temperature of etching Si3N4 of^545°C,which is^160°C lower than that of PbO.Besides,by applying Ag2TeO3,conductive silver nanoparticles with a length of about 300~500 nm and a thickness of^50 nm form in the Ag/Si contact interface,which effectively reduces the Ag-Si contact resistance,and leads to a high solar cell efficiency of^18.4%.This study opens a new window for further enhancing the solar cell efficiency in the future.

关 键 词：SILVER TELLURITE SOLAR CELL silicon NITRIDE Ag-Si contact SOLAR CELL efficiency 

分 类 号：TM914.4[电气工程—电力电子与电力传动] O614.122[理学—无机化学]