三维阻变存储器的研究进展  

Research Progress on 3D Resistive Random Access Memory

作　　者：高代法 王晓荃 王悦 尹家宇 陈铖颖 Gao Daifa;Wang Xiaoquan;Wang Yue;Yin Jiayu;Chen Chengying(School of Opto-Electronic and Communication Engineering,Xiamen University of Technology,Xiamen 361024,China)

机构地区：[1]厦门理工学院光电与通信工程学院,福建厦门361024

出　　处：《半导体技术》2020年第3期179-187,194,共10页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61704143);福建省自然科学基金面上项目(2018J01566);福建省中青年教师教育科研项目(JAT170428);厦门理工学院高层次人才项目(YKJ17019R)。

摘　　要：在我国信息产业高速发展的今天,传统存储器难以满足目前的数据存储需求,亟需发展新一代高性能存储器。阻变存储器(RRAM)因其具有结构简单、功耗低、集成密度高、读/写速度快等优势,被认为是最具发展潜力的新兴存储器之一。综述了三维RRAM的发展现状,分析了现阶段三维RRAM面临的漏电流、热串扰、均一性、可靠性等问题,重点探讨了针对以上问题的解决方案,并对于RRAM未来的应用前景进行了分析和预测,认为其在替代传统存储器、神经网络计算、芯片加密防护等方面有重要的应用前景。Today,with the rapid development of China’s information industry,conventional memories cannot meet the current requirement of data storage.It is urgent to develop a new generation of high-performance memory.Resistive random access memory(RRAM)is considered as one of the most promi-sing emerging memories due to its advantages of simple structure,low power consumption,high integration density,fast read and write speeds,and so on.The development status of 3 D-RRAM is reviewed.The leakage current,thermal crosstalk,uniformity,reliability and other problems faced by 3 D-RRAM at present are analyzed.Solutions to these issues are emphatically discussed.The application prospect of RRAM is analyzed and predicted.It is believed that RRAM has important application prospect in replacing conventional memories,improving neural network calculation,chip encryption protection,etc.

关 键 词：三维阻变存储器(3D-RRAM) 漏电流 热串扰 均一性 可靠性 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]