基于GaN HEMT的宽带线性功率放大器  

Wide-Band Linear Power Amplifier Based on GaN HEMTs

作　　者：沈林泽[1] 杨大宝[1] Shen Linze;Yang Dabao(The 13^th Research.Institute,CETC,Shijiazhuang Q5QQ51,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2020年第3期195-199,235,共6页Semiconductor Technology

摘　　要：基于GaN高电子迁移率晶体管(HEMT)技术,研制了一款工作频率为0.8~1.5 GHz、线性输出功率超过100 W的宽带线性功率放大器。前级功率放大器采用负反馈电路,以提高工作频率带宽和级间匹配性。为改善输出功率的线性化指标,输出级功率放大器采用平衡式电路进行功率合成和匹配,平衡式电路利用90°混合耦合器实现。电路的仿真和优化采用S参数法进行宽带匹配设计。测试结果表明:在0.8~1.5 GHz工作频率内,放大器小信号增益平坦度小于1.3 dB;1 dB增益压缩点输出功率大于100 W,三阶互调失真大于29 dBc,功率附加效率大于40%,实现了宽带、高功率、高效率、高线性度的设计目标。Based on GaN high electron mobility transistor(HEMT)technology,a wide-band linear power amplifier with an operating frequency of 0.8-1.5 GHz and a linear output power over 100 W was developed.A negative feedback circuit was adopted in the front stage of the power amplifier to improve the operating frequency bandwidth and inter-stage matching.For the purpose of improving the output power linearity,the balanced circuit was used in the output stage for power combining and matching.The balanced circuit was realized by using a 90°hybrid coupler.The circuit was simulated and optimized based on the S parameter to realize the design of wide-band matching.The test results show that in the operating frequency of 0.8-1.5 GHz,the small signal gain flatness of the amplifier is less than 1.3 dB,the output power is more than 100 W at 1 dB gain compression point,the third-order intermodulation distortion is greater than 29 dBc and the power added efficiency is over 40%,which achieved the design goals of wide band width,high power,high efficiency and high linearity.

关 键 词：GaN高电子迁移率晶体管(HEMT) 功率放大器 宽带 线性化 平衡式电路 

分 类 号：TN722.75[电子电信—电路与系统]