碱性抛光液中抑制剂TT-LYK对Cu/Co电偶腐蚀的影响  

Effects of the Inhibitor TT-LYK in the Alkaline Slurry on Cu/Co Galvanic Corrosion

作　　者：黄超 潘国峰 王辰伟 齐嘉城 崔军蕊 Huang Chao;Pan Guofeng;Wang Chenwei;Qi Jiacheng;Cui Junrui(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《半导体技术》2020年第3期206-212,235,共8页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2019ZX02308,2016ZX02301003-004-007);河北省自然科学基金青年资金资助项目(F2015202267);河北工业大学优秀青年科技创新基金资助项目(2015007)。

摘　　要：研究了在甘氨酸和H2O2体系下加入新型抑制剂2,2′-[[(甲基-1H-苯并三唑-1-基)甲基]亚氨基]双乙醇(TT-LYK)对Cu/Co电偶腐蚀的影响。由化学机械抛光(CMP)实验结果可知,随着抑制剂体积分数的不断提高,Cu的去除速率和静态腐蚀速率均大幅减小,Co的去除速率和静态腐蚀速率相对Cu的变化较小,较好地保证了Cu/Co之间的去除速率选择比。动、静态Cu/Co电化学实验结果对比表明:当H2O2体积分数为0.15%,甘氨酸质量分数为1%时,在H2O2与甘氨酸之间的协同作用下,Co的标准电极电位低于Cu的,从而抑制了Co的腐蚀。加入体积分数0.1%的TT-LYK后,抑制剂与Cu反应生成致密氧化膜,抑制了Cu的腐蚀,但其对Co的影响较小,从而使Cu/Co电位差降低至4 mV,较好地抑制了Cu/Co之间的电偶腐蚀。The effect of the addition of a novel inhibitor TT-LYK on Cu/Co galvanic corrosion under the glycine and H2O2 system was studied.The results of the chemical mechanical polishing(CMP)experiment show that with the increase of the volume fraction of the inhibitor,the removal rate and static etching rate of copper are greatly reduced,variations of the removal rate and static corrosion rate of cobalt are relatively small than those of copper.A better removal rate selection ratio between copper and cobalt is guaranteed.The result comparison of dynamic and static Cu/Co electrochemical experiments shows that when the volume fraction of H2O2 is 0.15%and the mass fraction of glycine is 1%,the standard electrode potential of cobalt is lower than that of copper under the synergy between H2O2 and glycine,thus inhibiting the corrosion of cobalt.When TT-LYK with a volumn fraction of 0.1%is added,the inhibitor reacts with copper to form a dense oxidation film,which inhibits the corrosion of copper,but its effect on cobalt is relatively small.Therefore the potential difference between copper and cobalt is reduced to 4 mV and the galvanic corrosion between Cu/Co is inhibited.

关 键 词：化学机械抛光(CMP) CU CO 电偶腐蚀 TT-LYK 

分 类 号：TN305.2[电子电信—物理电子学]