W^6+改性对Bi4Ti3O(12)高温压电陶瓷电性能影响研究  

Effect of W^6+ Modification on Electrical Properties of Bi4Ti3O12 High Temperature Piezoelectric Ceramics

作　　者：张智鹏 沈宗洋 秦晨 宋福生 骆雯琴 王竹梅 李月明 ZHANG Zhipeng;SHEN Zongyang;QIN Chen;SONG Fusheng;LUO Wenqin;WANG Zhumei;LI Yueming(School of Materials Science and Engineering,Jingdezhen Ceramic Institute,China National Light Industry Key Laboratory of Functional Ceramic Materials,Energy Storage and Conversion Ceramic Materials Engineering Laboratory of Jiangxi Province,Jingdezhen 333403,Jiangxi,China)

机构地区：[1]景德镇陶瓷大学材料科学与工程学院,中国轻工业功能陶瓷材料重点实验室,江西省能量存储与转换陶瓷材料工程实验室,江西景德镇333403

出　　处：《陶瓷学报》2020年第1期29-34,共6页Journal of Ceramics

基　　金：National Natural Science Foundation of China(61671224);Science Foundation of Jiangxi Provincial Education Department of China(GJJ160919)。

摘　　要：采用传统固相法制备WO3掺杂Bi4Ti3O(12)(Bi4Ti(3-x)WxO(12),BITW,0.00≤x≤0.16)层状高温压电陶瓷,研究了W^6+掺杂对Bi4Ti3O(12)(BIT)陶瓷晶体微观结构与电性能的影响。研究表明适量的W^6+掺杂能使BIT陶瓷的晶粒尺寸细化且均匀,有效地提高了陶瓷的致密度,且WO3的引入降低了BIT陶瓷的电导率和介电损耗,提高了其压电与机电性能。当WO3掺杂量x=0.14时,陶瓷具有如下优异性能:压电常数d(33)=16 p C/N,平面机电耦合系数kp=8.1%,机械品质因数Qm=1942,介电常数εr=160(@100 k Hz),介电损耗tanδ=0.16%(@100 k Hz),居里温度Tc=632℃,在500℃下,电阻率ρ=9.4×10^7Ω·cm,表明BITW陶瓷在高温应用方面具有很大的前景。WO3 modified bismuth layer-structured Bi4Ti3O12(Bi4Ti3-xWxO12, 0.00≤x≤0.16, BITW) ferroelectric ceramics were synthesized by using asolid-state reaction method. The effect of W^6+ modification on microstructure and electrical properties of the Bi4Ti3O12(BIT) ceramics was studied. It was found that the grains of the BITW ceramics were refined and the microstructure was homogenized at the optimal doping concentration of W6+. As a consequence, both the conductivity and dielectric loss of the ceramics were reduced, while the piezoelectric and electromechanical properties were enhanced, due to the improved densification behavior of the materials. When the WO3 doping concentration was x=0.14, the ceramics exhibited optimum electrical properties, with d33=16 pC/N, kp=8.1%, Qm=1942, εr=160(at 100 k Hz), tanδ=0.016(at 100 k Hz), TC=632 ℃ and ρ= 9.4× 107 Ω·cm at 500 ℃, indicating that the BITW ceramics could have potential in high temperature applications.

关 键 词：铋层状陶瓷 压电性能 介电性能 热稳定性 BI4TI3O12 

分 类 号：TQ174.74[化学工程—陶瓷工业]