中间层掺杂对具有隧穿结构的非晶硅/微晶硅叠层电池的影响  

Effect of Interlayer Doping on a Si∶H/μc Si∶H Tandem Cells with Tunneling Structure

作　　者：靳果[1,2] 孟阳 JIN Guo;MENG Yang(Henan Polytechnic Institute,Nanyang,Henan,473000,CHN;Northwest University,Xi'an,710069,CHN;Xi'an Jiaotong University,Xi'an,710069,CHN)

机构地区：[1]河南工业职业技术学院,河南南阳473000 [2]西北大学,西安710069 [3]西安交通大学,西安710069

出　　处：《固体电子学研究与进展》2020年第1期71-78,共8页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(51275084);国家重点研发计划项目(2017YFA0701200);2019年南阳市科技计划项目(KJGG078)。

摘　　要：为了提高非晶硅/微晶硅叠层电池的转换效率和稳定性,在隧穿结构中引入ZnO∶B中间层,研究了中间层掺杂情况对叠层电池短路电流密度、开路电压、填充因子、转换效率等性能的影响。实验结果表明:最佳的非晶硅/微晶硅叠层电池中间层为厚度较薄、掺杂浓度较高的ZnO∶B,有利于叠层电池整体性能的提高。最终,采用厚度为40 nm,B2H6流量为5 ml/min的ZnO∶B中间层,制备出了初始效率为12.2%、衰退率在8%以内的叠层电池。In order to improve the conversion efficiency and stability of amorphous silicon/micro crystalline silicon tandem batteries,ZnO∶B interlayer was added to the tunneling structure,and the ef fects of interlayer doping on the short circuit current density,open circuit voltage,filling factor and conversion efficiency were studied.The experimental results show that the optimum interlayer for tan dem cells is the ZnO∶B with thinner thickness and higher doping level.Finally,the tandem cells with an initial efficiency of 12.2%and a decay rate of less than 8%are fabricated by using a interlayer with 40 nm thickness and 5 ml/min B2H6 flow rate.

关 键 词：ZnO∶B 中间层 掺杂 非晶硅/微晶硅叠层电池 

分 类 号：TM914[电气工程—电力电子与电力传动]