溴化铈晶体的阴阳离子共掺生长方法研究  

Study on the Growth Method of CeBr3 Crystal by Anionic and Cationic Co-doping

作　　者：武欢[1] 李海林[1] 何晔[1] 王瑞 刘建军[1] 王佳[1] 丁雨憧[1] WU Huan;LI Hailin;HE Ye;WANG Rui;LIU Jianjun;WANG Jia;DING Yuchong(The 26th Insititue of China Electronics Technology Group Corporation, Chongqing 400060, China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2020年第2期245-247,共3页Piezoelectrics & Acoustooptics

基　　金：2016年工信部工业强基工程基金资助项目(TC160A310-17)。

摘　　要：采用阴阳离子共掺法提高了溴化铈晶体质量。研究结果表明,通过掺杂F-能有效消除晶体开裂、潮解等缺陷,同时掺杂Sr^2+能提高晶体的光学线性输出及能量分辨率。采用改进的坩埚下降法进行晶体生长,掺杂摩尔分数为x(CeBr3)=98%,x(SrBr2)=2%,x(CeF3)=10%时,生长出 45 mm×90 mm的溴化铈晶体毛坯,切割成的器件经137Cs放射源662 keVγ线作用下能量分辨率可达4.0%。The quality of cerium bromide(CeBr3)crystal was improved by using the anionic and cationic co-doped method.The results show that the defects such as cracking and fluidization can be effectively eliminated by doping F-,and the optical linear output and the energy resolution of the crystal can be improved by doping Sr^2+at the same time.The crystal blank of cerium bromide with 45 mm×90 mm was grown by Bridgman method,and the doping ratio was 98%CeBr3,2%SrBr2,10%CeF3.The energy resolution of the cut device is 4.0%under the action of 662 keV gamma ray of 137Cs radiation source.

关 键 词：溴化铈 阴阳离子共掺 潮解 闪烁晶体 坩埚下降法 

分 类 号：TN384[电子电信—物理电子学]