纳米非晶 Si_3N_4固体结构和键合特征  

STRUCTURE AND BOND CHARACTERIZATION OF THE NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLID

作　　者：张立德[1] 王涛[1] 蔡树芝[1] 牟季美[2] 

机构地区：[1]中国科学院固体物理研究所,研究员合肥市230031 [2]中国科学技术大学

出　　处：《材料科学进展》1992年第6期523-527,共5页

摘　　要：本文用 X 射线径向分布函数、电镜观察、X 射线电子能谱和 X 射线衍射图谱较系统地研究了纳米 Si_3N_4固体。结果表明,纳米非晶 Si_3N_4在25—1300℃热处理后颗粒没有明显长大,界面组分仍然占有相当大的比例,保持纳米非晶态基本特征、界面为一种新型短程序,Si—N 键配位严重不足,Si 悬键较多。纳米 Si_3N_4键结构不是典型的共价键。高于400℃退火,氧化明显,试样表面有 SiO_2生成。The nanometer-sized silicon nitride solids(NANO-SNS),heated-treated atdifferent conditions,were systematically studied in terms of X-ray patterns and TEM observa-tions.The basic characterizations of the structure and the bond for NANO-SNS were re-vealed.The results show as follows:after heat-treated at 25—1300℃,the particles of NANO-SNS do not grow up obviously and the interface volume fraction is still very large and the in-terface keeps basic characterization of nanometer state.The structure of the interface is a newtype of short-range order structure,which is different from bulk sturcture,i.e.,the coordination numbers of the Si—N bond are severely deficient,and there exist more Sidangling bonds.The bond structure of NANO-SNS is not the typical covalent bond.At 25—1300℃,the specimens still present the characterizations of the amorphous state.When T>400℃,oxidation of the specimen becomes apparent and some SiO_2 are formed on the surface ofthe specimen.

关 键 词：配位 氮化硅陶瓷 固体 结构 

分 类 号：TF123.34[冶金工程—粉末冶金]