一种用于GSM/WCDMA/LTE的宽带功率放大器  

Broadband power amplifier for GSM/WCDMA/LTE

作　　者：潘茂林 刘蕾蕾 PAN Maolin;LIU Leilei(College of Electronic and Optical Engineering&College of Microelectronics,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)

机构地区：[1]南京邮电大学电子与光学工程学院、微电子学院,江苏南京210023

出　　处：《南京邮电大学学报（自然科学版）》2020年第2期62-65,共4页Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition

摘　　要：基于GaAs HBT工艺设计了一款高线性、全集成的宽带功率放大器(PA)。芯片采用倒扣的装配方式。该功率放大器包括驱动级和功率级,工作频率为1.71~2.05 GHz。通过多级匹配增大带宽,实现了对GSM/WCDMA/LTE中多个上行频段的覆盖。测试结果表明,在整个工作频带内功率增益约为30 dB。工作电压为3.5 V,输出功率为28 dBm,采用10 MHz 50RB QPSK LTE信号测试时,功率附加效率(PAE)约为37%,邻信道泄漏比(ACLR)约为-38 dBc。芯片尺寸为0.755 mm×0.8 mm。A highly linearized and fully integrated broadband power amplifier(PA)based on GaAs HBT process is presented.The chip is assembled using a flip method.The PA,including a driver stage and a power stage,operates from 1.71 GHz to 2.05 GHz.To coverage of multiple uplink bands,multi-stage matching networks are used.The measurement results show that the power amplifier exhibits a linear power gain of 30 dB.Besides,when the operating voltage is 3.5 V,the output power is 28 dBm,and a 10 MHz 50 RB QPSK LTE signal is chosen as the input signal,the power added efficiency(PAE)and the adjacent channel leakage ratio(ACLR)of PA are about 37%and-38 dBc,respectively.The PA chip size with an on-chip bias circuit is only 0.755 mm×0.8 mm.

关 键 词：功率放大器 偏置电路 射频前端 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]